SST39VF080-70-4I-EIET Silicon Storage Tech, SST39VF080-70-4I-EIET Datasheet - Page 10

• Manufacturer Part Number: SST39VF080-70-4I-EIET
• Description: Semiconductors and Actives, flash, Memory
• Manufacturer: Silicon Storage Tech

EOL Data Sheet
TABLE 8: DC O
TABLE 9: R
TABLE 10: C
TABLE 11: R
©2007 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
V
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
ILC
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
V
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
2
= 3.0-3.6V
PERATING
DD
Current
C
HARACTERISTICS
DD
C
S
FOR
= 3V for VF devices. Not 100% tested.
YSTEM
HARACTERISTICS
SST39LF080
P
OWER
V
V
0.7V
DD
DD
Min
-
UP
-0.3
-0.2
DD
AND
T
Minimum Specification
IMINGS
2.7-3.6V
Limits
Max
100 + I
0.8
10
0.3
0.2
20
30
20
20
10
1
10,000
100
FOR
DD
SST39VF080
Units
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
CE#=V
All inputs=V
V
V
V
V
V
V
I
I
OL
OH
Cycles
DD
IN
OUT
DD
DD
DD
DD
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
1
=V
=V
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
DD
DD
IN
IL
IHC
ILC
100
100
, OE#=WE#=V
= 0V
= 0V
, V
Max
Min
Max
Max
Max
, V
SS
DD
DD
IL
DD
DD
JEDEC Standard A103
JEDEC Standard A117
, OE#=V
or V
=V
DD
=V
JEDEC Standard 78
DD
, V
ILT
=V
=V
DD
DD
, V
/V
DD,
DD
DD
Test Method
DD
IHT
Max
Max
DD
=V
WE#=V
Min
S71146-07-EOL
IH
IH
, at f=1/T
=V
Min
DD
, all I/Os open
Maximum
DD
Max
12 pF
Units
6 pF
Max
µs
µs
IHC
RC
T10.0 1146
T11.2 1146
T8.7 1146
T9.1 1146
Min
6/07