MAX11120ATI+ Maxim Integrated, MAX11120ATI+ Datasheet - Page 2

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MAX11120ATI+

Manufacturer Part Number
MAX11120ATI+
Description
Analog to Digital Converters - ADC 8Bit 4Ch 1Msps Precision ADC
Manufacturer
Maxim Integrated
Datasheet

Specifications of MAX11120ATI+

Rohs
yes
Number Of Channels
4/2
Architecture
SAR
Conversion Rate
1 MSPs
Resolution
8 bit
Input Type
Single-Ended/Pseudo-Differential
Snr
49.6 dB
Interface Type
3-Wire, QSPI, SPI
Operating Supply Voltage
2.35 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
TQFN-28
Maximum Power Dissipation
2758 mW
Minimum Operating Temperature
- 40 C
Number Of Converters
1
Voltage Reference
1 V
ABSOLUTE MAXIMUM RATINGS
V
OVDD, AIN0–AIN13, CNVST/AIN14, REF+, REF-/AIN15
CS, SCLK, DIN, DOUT, EOC TO GND ..... -0.3V to the Lower of
DGND to GND ......................................................-0.3V to +0.3V
Input/Output Current (all pins) ...........................................50mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TQFN
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
ELECTRICAL CHARACTERISTICS (MAX11122/MAX11125/MAX11128)
(V
unless otherwise noted. Typical values are at T
Maxim Integrated
DC ACCURACY (Notes 3 and 4)
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Gain Error
Offset Error Temperature
Coefficient
Gain Temperature Coefficient
Channel-to-Channel Offset
Matching
Line Rejection
DYNAMIC PERFORMANCE (250kHz, input sine wave) (Notes 3 and 7)
Signal-to-Noise Plus Distortion
Signal-to-Noise Ratio
Total Harmonic Distortion
(Up to the 5th Harmonic)
Spurious-Free Dynamic Range
Intermodulation Distortion
DD
Junction-to-Ambient Thermal Resistance (B
Junction-to-Case Thermal Resistance (B
DD
to GND ......................-0.3V to the lower of (V
to GND .............................................................-0.3V to +4V
= 2.35V to 3.6V, V
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
PARAMETER
OVDD
= 1.5V to 3.6V, f
1Msps, Low-Power, Serial 12-/10-/8-Bit,
SYMBOL
SINAD
OE
GE
SFDR
(V
DNL
SNR
THD
RES
PSR
IMD
INL
OVDD
TC
TC
JC
DD
) ..................2NC/W
SAMPLE
JA
+ 0.3V) and +4V
+ 0.3V) and +4V
A
) ...........29NC/W
12 bit
No missing codes
(Note 5)
(Note 6)
f
1
= +25NC.) (Note 2)
= 249.878kHz, f
= 1Msps, f
CONDITIONS
SCLK
2
= 219.97kHz
Continuous Power Dissipation (T
Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
= 16MHz, 50% duty cycle, V
TQFN (derate 34.4mW/NC above +70NC)..................2758mW
MAX11120–MAX11128
4-/8-/16-Channel ADCs
MIN
12
70
70
79
REF+
±0.8
±0.5
±0.4
TYP
-0.5
72.5
72.6
0.7
A
±2
-87
-85
88
= V
= +70NC)
DD
, T
A
MAX
= -40NC to +125NC,
±1.0
±1.0
±2.5
±4.0
±1.5
-78
ppm/NC
ppm/NC
UNITS
LSB/V
LSB
LSB
LSB
LSB
LSB
Bits
dB
dB
dB
dB
dB
2

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