74AUP1Z04GF,132 NXP Semiconductors, 74AUP1Z04GF,132 Datasheet

IC XTAL DRIVER LP 6-XSON

74AUP1Z04GF,132

Manufacturer Part Number
74AUP1Z04GF,132
Description
IC XTAL DRIVER LP 6-XSON
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet

Specifications of 74AUP1Z04GF,132

Logic Type
Inverter, X-Tal Driver
Supply Voltage
0.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
*
Function
Driver
Operating Temperature (max)
125C
Operating Temperature (min)
-40C
Package Type
XSON
Pin Count
6
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Bits
-
Lead Free Status / Rohs Status
Compliant
Other names
74AUP1Z04GF-H
74AUP1Z04GF-H
935281352132
1. General description
2. Features and benefits
The 74AUP1Z04 combines the functions of the 74AUP1GU04 and 74AUP1G04 with
enable circuitry and an internal bias resistor to provide a device optimized for use in
crystal oscillator applications.
When not in use the EN input can be driven HIGH, putting the device in a low power
disable mode with X1 pulled HIGH via R
action at the EN input makes the circuit tolerant to slower input rise and fall times across
the entire V
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
The integration of the two devices into the 74AUP1Z04 produces the benefits of a
compact footprint, lower power dissipation and stable operation over a wide range of
frequency and temperature.
74AUP1Z04
Low-power X-tal driver with enable and internal resistor
Rev. 3 — 22 July 2010
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
ESD protection:
Latch-up performance exceeds 100 mA per JESD78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C
OFF
OFF
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial Power-down mode operation at output Y
circuitry disables the output Y, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
PU
, X2 set LOW and Y set HIGH.Schmitt trigger
CC
Product data sheet
OFF
at output Y.

Related parts for 74AUP1Z04GF,132

74AUP1Z04GF,132 Summary of contents

Page 1

Low-power X-tal driver with enable and internal resistor Rev. 3 — 22 July 2010 1. General description The 74AUP1Z04 combines the functions of the 74AUP1GU04 and 74AUP1G04 with enable circuitry and an internal bias resistor to provide a device ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP1Z04GW −40 °C to +125 °C 74AUP1Z04GM −40 °C to +125 °C 74AUP1Z04GF −40 °C to +125 °C 74AUP1Z04GN −40 °C to +125 °C 74AUP1Z04GS 4. Marking Table 2. Marking ...

Page 3

... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1Z04 GND 001aad592 Fig 2. Pin configuration SOT363 6.2 Pin description Table 3. Pin description Symbol Pin EN 1 GND Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor ...

Page 4

... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...

Page 5

... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor ...

Page 6

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I pull-up current pu I power-off leakage current OFF ΔI additional power-off OFF leakage current I supply current CC ΔI additional supply current ...

Page 7

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter C output capacitance O g forward transconductance fs R bias resistance bias = −40 °C to +85 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor … ...

Page 8

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor …continued Conditions Y output input = −20 μ ...

Page 9

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I input leakage current I I pull-up current pu I power-off leakage current OFF ΔI additional power-off OFF leakage current I supply current CC ΔI additional supply current CC g forward transconductance ...

Page 10

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor …continued Conditions Y output input = −20 μ ...

Page 11

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I input leakage current I I pull-up current pu I power-off leakage current OFF ΔI additional power-off OFF leakage current I supply current CC ΔI additional supply current CC g forward transconductance ...

Page 12

... NXP Semiconductors ( kHz MHz MHz. i Fig 6. Typical bias resistance versus supply voltage 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay X1 to X2; see see 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor ...

Page 13

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay X1 to X2; see see propagation delay X1 to X2; see see 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor …continued ...

Page 14

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay X1 to X2; see see pF and power dissipation MHz GND capacitance [1] All typical values are measured at nominal V [ the same as t and PLH ...

Page 15

... NXP Semiconductors 12. Waveforms Measurement points are given in Logic levels: V and Fig 7. The input (X1) to output (X2) propagation delays Measurement points are given in Logic levels: V and Fig 8. The input (X1) to output (Y) propagation delays Table 9. Measurement points Supply voltage Output 0.5 × 3.6 V ...

Page 16

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 9. Test circuit for measuring switching times Table 10. ...

Page 17

... NXP Semiconductors R bias V CC 0.47 μ Δ -------- - Δ kHz constant. O Fig 10. Test set-up for measuring forward transconductance 13. Application information Crystal controlled oscillator circuits are widely used in clock pulse generators because of their excellent frequency stability and wide operating frequency range. The use of the 74AUP1Z04 provides the additional advantages of low power dissipation, stable operation over a wide range of frequency and temperature and a very small footprint ...

Page 18

... NXP Semiconductors (1) ( (3) (1) resonance (2) anti-resonance (3) load resonance Fig 13. Reactance and resistance characteristics of a crystal 13.1.1 Design Figure 14 circuit is basically a Pierce oscillator circuit in which the crystal is operating at its fundamental frequency and is tuned by the parallel load capacitance are in series with the crystal. They should be approximately equal. R ...

Page 19

... NXP Semiconductors Fig 14. Crystal oscillator configuration for the 74AUP1Z04 13.1.2 Testing After the calculations are performed for a particular crystal, the oscillator circuit should be tested. The following simple checks will verify the prototype design of a crystal controlled oscillator circuit. Perform them after laying out the board: • ...

Page 20

... NXP Semiconductors 14. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.8 0.20 0.10 OUTLINE VERSION IEC SOT363 Fig 15. Package outline SOT363 (SC-88) 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor ...

Page 21

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 22

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 17 ...

Page 23

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 24

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 25

... NXP Semiconductors 15. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 16. Revision history Table 12. Revision history Document ID Release date 74AUP1Z04 v.3 20100722 • Modifications: Added type number 74AUP1Z04GN (SOT1115/XSON6 package). ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 27

... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 18. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP1Z04 Product data sheet Low-power X-tal driver with enable and internal resistor 17 ...

Page 28

... NXP Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . 12 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 Application information ...

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