IS42S32400E-7BI ISSI, IS42S32400E-7BI Datasheet - Page 14

• Manufacturer Part Number: IS42S32400E-7BI
• Description: DRAM 128M (4Mx32) 143MHz Industrial Temp
• Manufacturer: ISSI

Specifications of IS42S32400E-7BI

• Product Category: DRAM
• Factory Pack Quantity: 240

DC RECOMMENDED OPERATING CONDITIONS
(T
IS42S32400E, IS45S32400E
ABSOLUTE MAXIMUM RATINGS
V
V
V
V
P
I
T
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
C
C
C
14
a
= 0
Symbol
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
cs
Symbol
opr
ih
il
out
stg
dd max
ddq
in
d max
in1
in2
i
/
V
(min) = -1.2V (
V
o
V
V
(max) = V
o
ddq
ih
il
C to +70
dd
max
(1)
(2)
ddq
o
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
C for Com. grade. T
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
pulse width
pulse width
< 3
ns
).
< 3
a
= -40
ns
).
(1)
o
C to +85
(At T
a
o
= 0 to +25°C, V
C for Ind. and A1 grade. T
Com.
Ind.
A1
A2
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
-1.0 to V
-0.5 to V
dd
Typ.
3.3
3.3
-0.5 to +4.6
-0.5 to +4.6
-40 to +105
-65 to +150
—
—
-40 to +85
-40 to +85
= V
0 to +70
Rating
50
1
ddq
ddq
dd
+ 0.5
+ 0.5
= 3.3 ± 0.3V)
a
= -40
V
ddq
Max.
+0.8
Integrated Silicon Solution, Inc. - www.issi.com
3.6
3.6
3.5 4.0
3.8 5.0
6.5 6.5
-6
o
+ 0.3 V
C to +105
Max.
Unit
mA
°C
°C
W
V
V
V
V
-7/-75E
Unit
V
V
V
o
C for A2 grade.)
Unit
pF
pF
pF
10/28/10
Rev. E