IS42S32400E-7BI ISSI, IS42S32400E-7BI Datasheet - Page 17

• Manufacturer Part Number: IS42S32400E-7BI
• Description: DRAM 128M (4Mx32) 143MHz Industrial Temp
• Manufacturer: ISSI

Specifications of IS42S32400E-7BI

• Product Category: DRAM
• Factory Pack Quantity: 240

IS42S32400E, IS45S32400E
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Integrated Silicon Solution, Inc. - www.issi.com
Rev. E
10/28/10
SYMBOL PARAMETER
cac
rcd
rac
rc
ras
rp
rrd
ccd
dpl
dal
rbd
wbd
rql
wdl
pql
qmd
dmd
mrd
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
rcd
+ t
cac
)
CAS Latency = 3
CAS Latency = 3
CAS Latency = 3
CAS Latency = 3
CAS Latency = 2
CAS Latency = 2
CAS Latency = 2
CAS Latency = 2
166
-6
10
—
—
—
-2
—
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
-7
10
–2
—
—
—
—
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
-75E
133
7.5
—
—
—
—
-1
2
2
4
9
6
2
2
1
2
4
3
0
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
17