LPC1110FD20,529 NXP Semiconductors, LPC1110FD20,529 Datasheet - Page 79

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LPC1110FD20,529

Manufacturer Part Number
LPC1110FD20,529
Description
ARM Microcontrollers - MCU CortexM0 32bit 4KB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of LPC1110FD20,529

Rohs
yes
Core
ARM Cortex M0
Processor Series
LPC1110
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
4 KB
Data Ram Size
1 KB
On-chip Adc
Yes
Operating Supply Voltage
1.8 V to 3.6 V
Package / Case
SO-20
Mounting Style
SMD/SMT
Factory Pack Quantity
38
NXP Semiconductors
10. Dynamic characteristics
LPC111X
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 18.
T
[1]
[2]
Table 19.
T
[1]
[2]
Symbol Parameter
t
Symbol
N
t
t
t
t
V
r
wait
ret
er
prog
amb
amb
Fig 39. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= 40 C to +85 C.
= 40 C to +85 C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
39.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 February 2013
I
 400 mV at start of power-up (t = t
400 mV
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
 400 mV
DD
LPC1110/11/12/13/14/15
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2013. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
79 of 114
Unit
ms
s
mV
Unit
cycles
years
years
ms
ms

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