TJA1080ATS/2,112 NXP Semiconductors, TJA1080ATS/2,112 Datasheet - Page 33

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TJA1080ATS/2,112

Manufacturer Part Number
TJA1080ATS/2,112
Description
Bus Transceivers FLEXRAY TRANSCEIVER
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TJA1080ATS/2,112

Factory Pack Quantity
66
NXP Semiconductors
Table 13.
All parameters are guaranteed for V
T
ground; positive currents flow into the IC.
[1]
[2]
TJA1080A
Product data sheet
Symbol
C
C
Pin INH1
V
I
I
Pin INH2
V
I
I
Pin WAKE
V
I
I
Temperature protection
T
T
Power-on reset
V
V
V
L(INH1)
OL(INH1)
L(INH2)
OL(INH2)
IL(WAKE)
IH(WAKE)
vj
j(warn)(medium)
j(dis)(high)
OH(INH1)
OH(INH2)
th(det)(WAKE)
th(det)POR
th(rec)POR
hys(POR)
i(BM)
i(dif)(BP-BM)
=
Current flows from V
These values are based on measurements taken on several samples (less than 10 pieces). These measurements have taken place in
the laboratory and have been done at T
industrial test will be performed on production products.
40
C to +150
Static characteristics
Parameter
input capacitance on pin
BM
differential input
capacitance between
pin BP and pin BM
HIGH-level output
voltage on pin INH1
leakage current on pin
INH1
LOW-level output
current on pin INH1
HIGH-level output
voltage on pin INH2
leakage current on pin
INH2
LOW-level output
current on pin INH2
detection threshold
voltage on pin WAKE
LOW-level input current
on pin WAKE
HIGH-level input current
on pin WAKE
medium warning
junction temperature
high disable junction
temperature
power-on reset
detection threshold
voltage
power-on reset recovery
threshold voltage
power-on reset
hysteresis voltage
C; R
CC
to V
bus
BUF
= 45
. This means that the maximum sum current I
…continued
BAT
; R
= 6.5 V to 60 V; V
TRXD
amb
All information provided in this document is subject to legal disclaimers.
= 25 C and T
Conditions
not tested; with respect to all
other pins at ground;
V
not tested; with respect to all
other pins at ground;
V
I
Sleep mode
V
I
Sleep mode
V
low power mode
V
t > t
V
t > t
V
V
= 200
INH1
INH2
BM
(BM-BP)
INH1
INH2
WAKE
WAKE
BAT
BAT
wake(WAKE)
wake(WAKE)
= 100 mV; f = 5 MHz
Rev. 6 — 28 November 2012
= 0.2 mA
= 0.2 mA
> 5.5 V
> 5.5 V
= 0 V
= 0 V
= 2.4 V for
= 4.6 V for
= 100 mV; f = 5 MHz
unless otherwise specified. All voltages are defined with respect to
amb
CC
= 125 C. No characterization has been done for these parameters. No
= 4.75 V to 5.25 V; V
CC
+ I
[2]
[2]
BUF
BUF
Min
-
-
V
5
15
V
5
15
2.5
3
11
155
180
3.0
3.1
100
is 35 mA.
BAT
BAT
= 4.75 V to 5.25 V; V
 0.8 V
 0.8 V
Typ
8
2
0
5
0
5
-
-
-
165
190
-
-
-
BAT
BAT
 0.3 V
 0.3 V
TJA1080A
FlexRay transceiver
© NXP B.V. 2012. All rights reserved.
IO
Max
15
5
+5
+5
4.5
11
3
175
200
3.4
3.5
200
1
1
= 2.2 V to 5.25 V;
BAT
BAT
 0.1 V
 0.1 V
33 of 49
Unit
pF
pF
A
mA
A
mA
V
A
A
C
C
V
V
mV

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