CAT24C512YI-G ON Semiconductor, CAT24C512YI-G Datasheet - Page 4

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CAT24C512YI-G

Manufacturer Part Number
CAT24C512YI-G
Description
EEPROM 512KB I2C SER EEPROM
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT24C512YI-G

Rohs
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7. Test conditions according to “A.C. Test Conditions” table.
8. Tested initially and after a design or process change that affects this parameter.
9. t
Table 5. A.C. CHARACTERISTICS
V
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
t
CC
PU
PU
t
t
T
R
F
= 1.8 V to 5.5 V, T
Symbol
i
(Notes 8, 9)
t
t
t
t
t
t
t
HD:STA
HD:DAT
SU:DAT
SU:STO
SU:STA
(Note 8)
(Note 8)
is the delay between the time V
(Note 8)
SU:WP
HD:WP
F
t
t
t
HIGH
t
LOW
t
BUF
t
WR
SCL
DH
AA
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
Power-up to Ready Mode
A
= −40°C to +85°C and V
Parameter
CC
is stable and the device is ready to accept commands.
(Note 7)
0.2 x V
≤ 50 ns
0.3 x V
0.5 x V
Current Source: I
CC
CC
CC
CC
, 0.7 x V
to 0.8 x V
= 2.5 V to 5.5 V, T
V
CC
Min
250
4.7
4.7
4.7
2.5
50
http://onsemi.com
L
4
4
0
4
0
CC
= 3 mA (V
= 1.8 V − 5.5 V
Standard
CC
4
1,000
Max
100
300
3.5
CC
A
50
5
1
= −40°C to +125°C, unless otherwise specified.
≥ 2.5 V); I
V
CC
Min
100
0.6
1.3
0.6
0.6
0.6
1.3
2.5
50
L
0
0
= 1 mA (V
= 1.8 V − 5.5 V
Fast
Max
400
300
300
0.9
CC
50
5
1
< 2.5 V); C
T
V
A
CC
0.25
0.45
0.40
0.25
0.25
Min
0.5
0.1
50
50
= −405C to +855C
0
0
1
L
Fast−Plus
= 2.5 V − 5.5 V
= 100 pF
1,000
Max
0.40
100
100
50
5
1
Units
kHz
ms
ms
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
ms
ns
ns
ms
ms

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