S29GL256P90TFCR23 Spansion, S29GL256P90TFCR23 Datasheet - Page 80

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S29GL256P90TFCR23

Manufacturer Part Number
S29GL256P90TFCR23
Description
Flash 256Mb 3V 90ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P90TFCR23

Rohs
yes
80
TSOP Pin and BGA Package
Capacitance
Table S29GL-P Memory Array
Command Definitions, x16
Table S29GL-P Memory Array
Command Definitions, x8
Table System Interface String
Table Device Geometry Definition
Revision A13 (November 17, 2010)
Performance Characteristics
Ordering Information
Read Operation Timing Figure
Revision A14 (October 22, 2012)
Sector Erase
Erase Suspend
Writing Commands/Command
Sequences
Figure Advanced Sector Protection/
Unprotection
Table S29GL-P Memory Array
Command Definitions, x8
Table System Interface String
Advance Information on S29GL-R
65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Section
Changed RESET# values.
Changed number of cycles for Device ID to 6
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Changed number of cycles for Device ID to 6
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Changed value of address 20h (x16) to 0009h and description to
“Typical timeout for buffer write 2
Added values of 128 Mb-512 Mb densities to address 22h (x16)
For address 31h (x16) corrected x8 address
Updated access time options for S29GL512P
Updated speed options for S29GL512P
Added note
Clarified t
Clarified t
Sub-section RY/BY#: Clarified last sentence
Corrected Note numbering
Corrected Address for 3rd Cycle of Write-To-Buffer-Abort Reset command
Changed value of address 20h (x16) to 0006h
Updated section title to Advance Information on S29GL-S Eclipse 65 nm MirrorBit Power-On and
Warm Reset Timing
Updated section to cover GL-S Power-On and Warm Reset Timing
SEA
SEA
S29GL-P MirrorBit
D a t a
®
n
Flash Family
µs”
S h e e t
Description
S29GL-P_00_A14 October 22, 2012

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