GLS36VF1601G-70-4I-L1PE Greenliant, GLS36VF1601G-70-4I-L1PE Datasheet - Page 13

• Manufacturer Part Number: GLS36VF1601G-70-4I-L1PE
• Description: Flash 16M Flash 1M SRAM Industrial Temp
• Manufacturer: Greenliant

Specifications of GLS36VF1601G-70-4I-L1PE

• Rohs: yes
• Memory Type: Flash
• Memory Size: 16 Mbit
• Timing Type: Asynchronous
• Access Time: 70 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 15 mA
• Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: LFBGA-48

16 Mbit Concurrent SuperFlash
GLS36VF1601E / GLS36VF1602E
TABLE 4: Pin Description
TABLE 5: Operation Modes Selection
©2010 Greenliant Systems, Ltd.
Symbol
A
DQ
DQ
CE#
OE#
WE#
RST#
RY/BY#
WP#
BYTE#
V
V
NC
Mode
Read
Program
Erase
Standby
Write Inhibit
Product
Identification
Software
Mode
19
DD
SS
1. RST# = V
2. X can be V
3. Device ID =
-A
14
15
-DQ
/A
0
1
-1
0
Name
Address Inputs
Data Input/Output
Data Input/Output
and LBS Address
Chip Enable
Output Enable
Write Enable
Ready/Busy#
Write Protect
Word/Byte Configuration To select 8-bit or 16-bit mode.
Power Supply
Ground
No Connection
Hardware Reset
IH
IL
CE#
V
for all described operation modes
V
V
V
V
or V
IHC
X
X
IL
IL
IL
IL
IH
, but no other value.
OE#
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
GLS36VF1601E = 734BH,
GLS36VF1602E = 734AH
WE#
V
V
V
V
V
X
X
IH
IH
IH
IL
IL
Manufacturer’s ID
To provide memory addresses. During Sector-Erase and Hardware Sector Protection,
A
lines will select the block.
To output data during Read cycles and receive input data during Write cycles
Data is internally latched during a Write cycle. The outputs are in tri-state when
OE# or CE# is high.
DQ
A
To activate the device when CE# is low.
To gate the data output buffers
To control the Write operations
To reset and return the device to Read mode
To output the status of a Program or Erase operation
RY/BY# is a open drain output, so a 10K - 100K pull-up resistor is required
to allow RY/BY# to transition high indicating the device is ready to read.
To protect and unprotect top or bottom 8 KWord (4 outermost sectors) from Erase or
Program operation.
To provide 2.7-3.6V power supply voltage
Unconnected pins
19
-1
High Z / D
High Z / D
Device ID
-A
15
is used as the LSB address pin when in x8 mode (BYTE# = “0”)
DQ
High Z
(BFH)
11
is used as data I/O pin when in x16 mode (BYTE# = “1”)
D
D
7
X
OUT
address lines will select the sector. During Block-Erase A
-DQ
IN
2
OUT
OUT
0
3
Manufacturer’s ID
High Z / D
High Z / D
13
BYTE# = V
Device ID
High Z
(00H)
D
D
OUT
X
IN
OUT
OUT
3
IH
DQ
Functions
15
-DQ
DQ
8
BYTE# = V
14
DQ
-DQ
High Z
High Z
High Z
High Z
High Z
High Z
15
8
= A
= High Z
-1
IL
19
555H for Chip-Erase
-A
Sector or Block
S71274-05-000
15
See Table 6
Address
address,
address
A
A
Data Sheet
X
X
X
IN
IN
T4.0 1274
T5.2 1274
05/10