MC33663ALEFR2 Freescale Semiconductor, MC33663ALEFR2 Datasheet - Page 12
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MC33663ALEFR2
Manufacturer Part Number
MC33663ALEFR2
Description
LIN Transceivers dual LINcell
Manufacturer
Freescale Semiconductor
Datasheet
1.MC33663ASEF.pdf
(37 pages)
Specifications of MC33663ALEFR2
Rohs
yes
Operating Supply Voltage
7 V to 18 V
Supply Current
22 uA
Maximum Operating Temperature
+ 125 C
Package / Case
SOIC-14
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
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Table 5. Static Electrical Characteristics
Typical values noted reflect the approximate parameter means at T
12
33663
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
INH1, INH2 OUTPUT PINS
Notes
Receiver Threshold Center
Receiver Threshold Hysteresis
LIN dominant level with 500 Ω, 680 Ω and 1.0 kΩ load on the LIN bus
V
GND_SHIFT
LIN Wake-up Threshold from Sleep Mode
LIN Pull-up Resistor to V
LIN internal capacitor
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
Driver ON Resistance (Normal Mode)
Current load capability
Leakage Current (Sleep Mode)
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
13.
14.
15.
Characteristics noted under conditions 7.0 V ≤ V
BAT
(V
(V
I
From 7.0 V < V
0 < V
INH
_SHIFT
TH_DOM
TH_REC
This parameter is guaranteed by process monitoring but not production tested.
When an over-temperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This
parameter is tested with a test mode on ATE and characterized at laboratory.
When an over-temperature shutdown occurs, the INH1, INH2 high side are switched off and the LIN transmitter and receiver are in
recessive state. This parameter is tested with a test mode on ATE and characterized at laboratory.
= 50 mA
INH
< V
- V
+ V
SUP
TH_DOM
TH_REC
SUP
(13)
< 18 V
)
)/2
SUP
(14)
(15)
Characteristic
SUP
≤ 18 V, - 40 °C ≤ T
A
= 25 °C under nominal conditions, unless otherwise noted.
V
LINDOM_LEVEL
V
T
T
V
V
INHSD_HYS
SHIFT_GND
LINSD_HYS
SHIFT_BAT
V
Symbol
I
R
BUS_CNT
INH_load
T
T
INH
A
I
V
BUSWU
C
SLAVE
LEAK
INHSD
LINSD
HYS
≤ 125 °C, GND = 0 V, unless otherwise noted.
LIN
ON
0.475
Min
150
-5.0
150
0.0
0.0
20
–
–
–
–
–
–
–
–
Analog Integrated Circuit Device Data
Typ
160
160
0.5
4.3
30
20
20
–
–
–
–
–
–
–
–
Freescale Semiconductor
11.5%
11.5%
0.525
0.175
Max
200
200
0.3
5.3
5.0
60
30
50
30
–
–
V
V
V
V
V
Unit
mA
kΩ
pF
μA
SUP
SUP
SUP
°C
°C
°C
°C
BAT
BAT
V
Ω