NTB0102DP,125 NXP Semiconductors, NTB0102DP,125 Datasheet

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NTB0102DP,125

Manufacturer Part Number
NTB0102DP,125
Description
Translation - Voltage Levels 4.4ns 6.5V 250mW
Manufacturer
NXP Semiconductors
Type
Bidirectional Voltage Level Translatorsr
Datasheet

Specifications of NTB0102DP,125

Rohs
yes
Propagation Delay Time
4.4 ns
Supply Current
3.5 uA
Supply Voltage - Max
3.6 V, 5.5 V
Supply Voltage - Min
1.2 V, 1.65 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 40 C
Output Type
3-State

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB0102DP,125
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. General description
2. Features and benefits
The NTB0102 is a 2-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It features two 2-bit input-output ports
(An and Bn), one output enable input (OE) and two supply pins (V
can be supplied at any voltage between 1.2 V and 3.6 V and V
voltage between 1.65 V and 5.5 V, making the device suitable for translating between any
of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).
Pins An and OE are referenced to V
level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is
fully specified for partial power-down applications using I
the output, preventing the damaging backflow current through the device when it is
powered down.
NTB0102
Dual supply translating transceiver; auto direction sensing;
3-state
Rev. 4 — 23 January 2013
Wide supply voltage range:
I
Inputs accept voltages up to 5.5 V
ESD protection:
Latch-up performance exceeds 100 mA per JESD 78B Class II
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
V
HBM JESD22-A114E Class 2 exceeds 2500 V for A port
HBM JESD22-A114E Class 3B exceeds 15000 V for B port
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1500 V
circuitry provides partial Power-down mode operation
CC(A)
: 1.2 V to 3.6 V and V
CC(B)
CC(A)
: 1.65 V to 5.5 V
and pins Bn are referenced to V
OFF
. The I
CC(B)
CC(A)
OFF
can be supplied at any
Product data sheet
and V
circuitry disables
CC(B)
CC(B)
. A LOW
). V
CC(A)

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NTB0102DP,125 Summary of contents

Page 1

NTB0102 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 — 23 January 2013 1. General description The NTB0102 is a 2-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range 40 C to +125 C NTB0102DP 40 C to +125 C NTB0102GT 40 C to +125 C NTB0102GD 40 C to +125 C NTB0102GF 40 C to +125 C NTB0102GU 4. Marking Table 2. Marking Type number ...

Page 3

... NXP Semiconductors 6. Pinning information 6.1 Pinning NTB0102 1 B2 GND CC( 001aam484 Fig 2. Pin configuration SOT505-2 (TSSOP8) NTB0102 B2 1 GND CC( Transparent top view Fig 4. Pin configuration SOT996-2 (XSON8) 6.2 Pin description Table 3. Pin description Symbol Pin SOT505-2, SOT833-1, SOT1089 and SOT996-2 ...

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... NXP Semiconductors Table 3. Pin description …continued Symbol Pin SOT505-2, SOT833-1, SOT1089 and SOT996 CC(B) n. Functional description [1] Table 4. Function table Supply voltage V V CC(A) CC( 5.5 V CC( 5.5 V CC(B) [2] [2] GND GND [ HIGH voltage level LOW voltage level don’t care high-impedance OFF-state. ...

Page 5

... NXP Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter V supply voltage A CC(A) V supply voltage B CC(B) V input voltage I V output voltage O T ambient temperature amb t/V input transition rise and fall rate [1] The A and B sides of an unused I/O pair must be held in the same state, both at V ...

Page 6

... NXP Semiconductors Table 8. Typical supply current At recommended operating conditions; voltages are referenced to GND (ground = 0 V CC(A) 1 CC(A) CC( Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level port and OE input ...

Page 7

... NXP Semiconductors Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions I supply current CC( LOW; V CC(A) V CC( HIGH; V CC(A) V CC(B) V CC(A) V CC(A) I CC( LOW; V CC(A) V CC( HIGH; V CC(A) V CC(B) V CC(A) V CC( CC(A) V CC(A) V CC(B) [ the supply voltage associated with the input. ...

Page 8

... NXP Semiconductors Typical dynamic characteristics for temperature 25 C Table 10. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t output skew time between channels sk(o) t pulse width data inputs W f data rate data [ the same as t and ...

Page 9

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +85 C Table 11. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t output skew between channels sk(o) time t pulse width data inputs W f data rate data = 2.5 V  0 CC(A) t propagation ...

Page 10

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 12. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 1.5 V  0 CC(A) t propagation delay enable time disable time external load dis ...

Page 11

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 12. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t output skew between channels sk(o) time t pulse width data inputs data rate data = 3.3 V  0 CC(A) t propagation ...

Page 12

... NXP Semiconductors Table 13. Typical power dissipation capacitance Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions = 25 C T amb C power outputs enabled dissipation A port: (direction capacitance A port: (direction port: (direction port: (direction outputs disabled GND ...

Page 13

... NXP Semiconductors OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in V and V are typical output voltage levels that occur with the output load Fig 7. Enable and disable times Table 14. Measurement points Supply voltage ...

Page 14

... NXP Semiconductors Test data is given in Table All input pulses are supplied by generators having the following characteristics: PRR  10 MHz Load resistance Load capacitance including jig and probe capacitance External voltage for measuring switching times. EXT Fig 8. Test circuit for measuring switching times Table 15 ...

Page 15

... NXP Semiconductors 13. Application information 13.1 Applications Voltage level-translation applications. The NTB0102 can be used to interface between devices or systems operating at different supply voltages. See operating circuit using the NTB0102. 1.8 V 0.1 μF Fig 9. Typical operating circuit NTB0102 Product data sheet Dual supply translating transceiver; auto direction sensing; 3-state 1 ...

Page 16

... NXP Semiconductors 13.2 Architecture The architecture of the NTB0102 is shown in extra input signal to control the direction of data flow from from static state, the output drivers of the NTB0102 can maintain a defined output level, but the output architecture is designed to be weak, so that they can be overdriven by an external driver when data on the bus starts flowing in the opposite direction ...

Page 17

... NXP Semiconductors 13.3 Input driver requirements For correct operation, the device driving the data I/Os of the NTB0102 must have a minimum drive capability of 2 mA See input voltage input threshold voltage of the NTB0102 (typically supply voltage of the external driver. D Fig 11. Typical input current versus input voltage graph 13 ...

Page 18

... NXP Semiconductors 14. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.00 0.75 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

Page 19

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 20

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.5 mm terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.05 0.35 2.1 mm nom 0.5 min 0.00 0.15 1.9 Outline version IEC SOT996-2 Fig 14. Package outline SOT996-2 (XSON8) NTB0102 Product data sheet Dual supply translating transceiver ...

Page 21

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version ...

Page 22

... NXP Semiconductors XQFN10: plastic, extremely thin quad flat package; no leads; 10 terminals; body 1.40 x 1. terminal 1 index area terminal 1 index area Dimensions (1) Unit max 0.5 0.05 0.25 mm nom 0.127 0.20 min 0.00 0.15 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 23

... NXP Semiconductors 15. Abbreviations Table 16. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model NMOS N-type Metal Oxide Semiconductor PMOS P-type Metal Oxide Semiconductor PRR Pulse Repetition Rate 16. Revision history Table 17. ...

Page 24

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 25

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 26

... NXP Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Application information ...

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