NTB0102GD,125 NXP Semiconductors, NTB0102GD,125 Datasheet - Page 23

• Manufacturer Part Number: NTB0102GD,125
• Description: Translation - Voltage Levels 5.9ns 6.5V 250mW
• Manufacturer: NXP Semiconductors

Specifications of NTB0102GD,125

• Rohs: yes
• Propagation Delay Time: 5.9 ns
• Supply Voltage - Max: + 6.5 V
• Supply Voltage - Min: - 0.5 V
• Maximum Operating Temperature: + 125 C
• Package / Case: XSON-8
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 3000

NXP Semiconductors
15. Abbreviations
Table 16.
16. Revision history
Table 17.
NTB0102
Product data sheet
Acronym
CDM
DUT
ESD
HBM
MM
NMOS
PMOS
PRR
Document ID
NTB0102 v.4
Modifications:
NTB0102 v.3
Modifications:
NTB0102 v.2
NTB0102 v.1
Abbreviations
Revision history
Description
Charged Device Model
Device Under Test
ElectroStatic Discharge
Human Body Model
Machine Model
N-type Metal Oxide Semiconductor
P-type Metal Oxide Semiconductor
Pulse Repetition Rate
Release date
20130123
20111110
20110428
20100922
•
•
For type number NTB0102GD XSON8U has changed to XSON8.
Legal pages updated.
All information provided in this document is subject to legal disclaimers.
Dual supply translating transceiver; auto direction sensing; 3-state
Product data sheet
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 4 — 23 January 2013
Change notice
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-
-
-
NTB0102 v.3
NTB0102 v.2
NTB0102 v.1
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Supersedes
NTB0102
© NXP B.V. 2013. All rights reserved.
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