ZSLS7025ZI1R ZMDI, ZSLS7025ZI1R Datasheet - Page 19
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ZSLS7025ZI1R
Manufacturer Part Number
ZSLS7025ZI1R
Description
LED Lighting Drivers LED Driver
Manufacturer
ZMDI
Datasheet
1.ZSLS7025ZI1R.pdf
(27 pages)
Specifications of ZSLS7025ZI1R
Rohs
yes
Input Voltage
5 V
Maximum Supply Current
400 uA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Minimum Operating Temperature
- 40 C
4.2.3
External capacitor C
bypass the VDD pin using a low ESR capacitor (a 10µF ceramic capacitor is recommended) to provide a high
frequency path to GND.
4.2.4
The C
100μF or higher is recommended to prevent excessive input voltage ripple. Also see section 4.2.3.
4.2.5
The output capacitor (C
directly impacts the line regulation and the load regulation.
Using a low ESR capacitor can minimize output ripple voltage and improve output current regulation. For most
applications, a 220μF low ESR capacitor will be sufficient. Proportionally lower ripple can be achieved with higher
capacitor values.
4.2.6
The D
switching speed. The diode’s average current rating must exceed the application’s average output current. The
diode’s maximum reverse voltage rating must exceed the over-voltage protection of the application. For PWM
dimming applications, note the reverse leakage of the Schottky diode. Lower leakage current will drain the output
capacitor less during PWM low periods, allowing for higher PWM dimming ratios.
4.2.7
The Q
configured for the application. The V
rating must be higher than the input peak current (I
the thermal resistance of the MOSFET package causes the junction temperature to exceed maximum ratings.
Also see section 2.10 regarding the effect of the MOSFET R
Data Sheet
June 28, 2012
ZSLS7025
Boost LED Driver
IN
1
1
external MOSFET must have a V
external diode for the ZSLS7025 should be a Schottky diode with a low forward voltage drop and fast
input capacitor connected to V
High Frequency Noise Filter Capacitor C
Input Capacitor C
Output Capacitor C
Schottky Rectifier Diode D
External MOSFET Q
© 2012 Zentrum Mikroelektronik Dresden AG — Rev.1.00
All rights reserved. The material contained herein may not be reproduced, adapted, merged, translated, stored, or used without
the prior written consent of the copyright owner. The information furnished in this publication is subject to changes without notice.
VDD
OUT
forms a high-frequency noise filter for the VDD pin. For all configurations, use C
) holds the output current while the Q
IN
OUT
1
for Reducing Output Ripple
GS(th)
1
IN
DS
will supply the transient input current for the power inductor. A value of
of the MOSFET should be not higher than 4V. The MOSFET’s current
rating that exceeds the maximum over-voltage protection (OVP) level
IN_PEAK
VDD
). Determine the power dissipation within Q
DS(ON)
on DC power loss.
1
external MOSFET turns ON. This capacitor
1
19 of 27
and check if
VDD
to