VND5E008AY-E STMicroelectronics, VND5E008AY-E Datasheet - Page 25

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VND5E008AY-E

Manufacturer Part Number
VND5E008AY-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 41V 8mOhm 76A 2uA
Manufacturer
STMicroelectronics
Datasheet

Specifications of VND5E008AY-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
VND5E008AY-E
3
3.1
3.2
Application information
Figure 32. Application schematic
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/1 table.
MCU I/Os protection
When negative transients are present on the V
approximately -1.5 V. ST suggests to insert a resistor (R
microcontroller I/O pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 1:
Calculation example:
For V
Recommended values: R
CCPK
ld
Note: Channel 2 has the same internal circuit as channel 1.
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
75 Ω ≤ R
CCpeak
max rating. The same applies if the device is subject to transients on the V
= - 1.5 V; I
prot
≤ 240 kΩ.
-V
latchup
CCpeak
prot
=10 kΩ, C
≥ 20 mA; V
Doc ID 13620 Rev 3
/ I
latchup
EXT
≤ R
OHμC
=10 nF
prot
≥ 4.5 V
CC
≤ (V
line, the control pins is pulled negative to
.
OHμC
prot
- V
) in line to prevent the
IH
) / I
IHmax
Application information
CC
line
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