AT28C010-12TU Atmel, AT28C010-12TU Datasheet - Page 2

IC EEPROM 1MBIT 120NS 32TSOP

AT28C010-12TU

Manufacturer Part Number
AT28C010-12TU
Description
IC EEPROM 1MBIT 120NS 32TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT28C010-12TU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP
Density
1Mb
Interface Type
Parallel
Organization
128Kx8
Access Time (max)
120ns
Write Protection
Yes
Data Retention
10Year
Operating Supply Voltage (typ)
5V
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
AT28C010-12TU
Manufacturer:
ATMEL
Quantity:
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AT28C010-12TU
Manufacturer:
ATMEL
Quantity:
546
Absolute Maximum Ratings*
2
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C010 Military
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-
ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with
power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is
less than 300 μA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for
external components. The device contains a 128-byte page register to allow writing of up to 128-
bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation of a write
cycle, the device will automatically write the latched data using an internal control timer. The end
of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has
been detected a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device
utilizes internal error correction for extended endurance and improved data retention character-
istics. An optional software data protection mechanism is available to guard against inadvertent
writes. The device also includes an extra 128-bytes of EEPROM for device identification or
tracking.
Block Diagram
CC
+ 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
0010D–PEEPR–7/09

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