BR93L56-W Rohm Semiconductor, BR93L56-W Datasheet - Page 4

• Manufacturer Part Number: BR93L56-W
• Description: IC EEPROM 2KBIT 2MHZ 8DIP
• Manufacturer: Rohm Semiconductor

Specifications of BR93L56-W

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 2K (128 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

●Electrical characteristics
© 2011 ROHM Co., Ltd. All rights reserved.
BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series
www.rohm.com
(Unless otherwise specified, VCC=2.5～5.5V, Ta=-40～+85℃, BR93L□□-W, Ta=-40～+105℃, BR93A□□-WM)
◎Radiation resistance design is not made.
(Unless otherwise specified, VCC=1.8～2.5V, Ta=-40～+85℃, BR93L□□-W)
◎Radiation resistance design is not made.
“L” input voltage 1
“L” input voltage 2
“H” input voltage 1
“H” input voltage 2
“L” output voltage 1
“L” output voltage 2
“H” output voltage 1
“H” output voltage 2
Input leak current
Output leak current
Current consumption
at action
Standby current
“L” input voltage
“H” input voltage
“L” output voltage
“H” output voltage
Input leak current
Output leak current
Current consumption
at action
Standby current
Parameter
Parameter
Symbol
Symbol
V
V
V
V
V
V
I
I
I
V
I
I
I
V
V
V
V
I
I
V
I
I
CC1
CC2
CC3
CC1
CC2
CC3
OH1
OH2
I
I
OL1
OL2
LO
SB
LO
SB
IH1
IH2
IL1
IL2
OL
OH
LI
LI
IH
IL
0.7 x VCC
0.7 x VCC
VCC-0.2
VCC-0.2
Min.
Min.
-0.3
-0.3
-0.3
2.0
2.4
-1
-1
-1
-1
0
0
0
-
-
-
-
-
-
-
-
Limits
Limits
Typ.
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4/40
0.2 x VCC
0.2 x VCC
VCC+0.3
VCC+0.3
VCC+0.3
Max.
VCC
VCC
Max.
VCC
+0.8
0.4
0.2
3.0
1.5
4.5
0.2
1.5
0.5
+1
+1
+1
+1
2
2
2
Unit
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
V
4.0V≦VCC≦5.5V
VCC≦4.0V
4.0V≦VCC≦5.5V
VCC≦4.0V
I
I
I
I
V
V
f
f
f
CS=0V, DO=OPEN
I
I
V
V
f
f
f
CS=0V, DO=OPEN
OL
OL
OH
OH
SK
SK
SK
OL
OH
SK
SK
SK
IN
OUT
IN
OUT
=2.1mA, 4.0V≦VCC≦5.5V
=100μA
=2MHz, t
=2MHz (READ)
=2MHz, t
=100μA
=500kHz, t
=500kHz (READ)
=500kHz, t
=-0.4mA, 4.0V≦VCC≦5.5V
=-100μA
=0V～VCC
=-100μA
=0V～VCC
=0V～VCC, CS=0V
=0V～VCC, CS=0V
E/W
E/W
E/W
E/W
=5ms (WRITE)
=5ms (WRAL, ERAL)
Condition
Condition
=5ms (WRITE)
=5ms (WRAL, ERAL)
Technical Note
2011.02 - Rev.F