IS61WV6416BLL-12TLI ISSI, Integrated Silicon Solution Inc, IS61WV6416BLL-12TLI Datasheet - Page 4
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IS61WV6416BLL-12TLI
Manufacturer Part Number
IS61WV6416BLL-12TLI
Description
IC SRAM 1MBIT 12NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet
1.IS61WV6416BLL-12TLI.pdf
(18 pages)
Specifications of IS61WV6416BLL-12TLI
Memory Size
1M (64K x 16)
Package / Case
44-TSOP II
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
12ns
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
12 ns
Supply Voltage (max)
3.63 V
Supply Voltage (min)
2.97 V
Maximum Operating Current
45 mA
Organization
64 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1040
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61WV6416BLL-12TLI
Manufacturer:
ISSI
Quantity:
3 716
Company:
Part Number:
IS61WV6416BLL-12TLI
Manufacturer:
ISSI
Quantity:
6 227
Part Number:
IS61WV6416BLL-12TLI
Manufacturer:
ISSI
Quantity:
20 000
IS64WV6416BLL
IS61WV6416BLL
DC ELECTRICAL CHARACTERISTICS
V
Note:
1.
DC ELECTRICAL CHARACTERISTICS
V
Note:
1.
4
DD
DD
Symbol
V
V
V
V
I
I
Symbol
V
V
V
V
I
I
LI
LO
LI
LO
OH
OH
OL
IH
IL
OL
IH
IL
= 2.5V-3.6V
= 3.3V + 10%
V
V
V
V
IL
IH
IL
IH
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
(max.) = V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
DD
+ 0.3V DC; V
+ 0.3V DC; V
IL
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
(1)
(1)
IH
IH
(max.) = V
(max.) = V
Test Conditions
V
V
GND ≤ V
GND ≤ V
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
DD
DD
DD
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
= Min., I
= Min., I
= Min., I
= Min., I
(Over Operating Range)
(Over Operating Range)
OUT
IN
OUT
IN
≤ V
≤ V
OH
OH
OL
OL
≤ V
≤ V
DD
= 1.0 mA
= 8.0 mA
DD
= –1.0 mA
= –4.0 mA
DD
DD
, Outputs Disabled
, Outputs Disabled
Min.
Min.
–0.3
–0.3
2.3
2.0
2.4
—
–2
–2
—
–2
–2
2
V
V
DD
DD
Max.
Max.
0.4
0.8
0.4
0.8
—
—
ISSI
2
2
2
2
+ 0.3
+ 0.3
1-800-379-4774
Unit
Unit
10/10/06
µA
µA
µA
µA
Rev. C
V
V
V
V
V
V
V
V
®