IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 22

• Manufacturer Part Number: IS43R16160B-5TL
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 200 MHz
• Access Time: 0.7 ns
• Supply Voltage (max): 2.7 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 290 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant
• Other names: 706-1085; IS43R16160B-5TL

IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
22
CAPACITANCE
(Ta= 25
Symbol
CI(A)
CI(C)
CI(K)
CI/O
AC TIMING REQUIREMENTS(Continues)
Output Load Condition
Symbol
tXSRD Exit Self Ref. to -Read command
tXPNR Exit Power down to command
tXPRD Exit Power down to -Read command
tXSNR Exit Self Ref. to non-Read command
tREFI
tRCD
tRRD
tDAL
tWTR
tRAS
tRFC
tWR
o
tRC
tRP
C, Vdd = VddQ = 2.5V + 0.2V Vss = VssQ = 0V, unless otherwise noted)
V
OUT
Row Active time
Row Cycle time(operation)
Auto Ref. to Active/Auto Ref. command period
Row to Column Delay
Row Precharge time
Act to Act Delay time
Write Recovery time
Auto Precharge write recovery + precharge time
Internal Write to Read Command Delay
Average Periodic Refresh interval
I/O Capacitance, I/O, DQS, DM pin
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CLK pin
AC Characteristics Parameter
Zo=50Ω
Parameter
V
TT
=V
30pF
50Ω
REF
V
REF
Min.
VI=1.25v
f=100MHz
VI=25mVrms
200
40
55
70
15
15
10
15
−
75
Test Conditio
2
1
1
-5
120,000
Max
7.8
DQS
n
Min.
200
42
60
72
18
18
12
15
75
−
1
1
1
Min. Max.
1.3
1.3
1.3
2
Limits
-6
120,000
Max
7.8
2.5
2.5
2.5
4
Integrated Silicon Solution, Inc.
DQ
Cap.(Max.)
Min.
200
Output Timing
Measurement
Reference Point
45
−
65
75
20
20
15
15
75
1
1
1
Delta
0.75
0.25
1.3
-75
120,000
Max
7.8
U
pF
pF
pF
pF
nit
Unit
tCK
tCK
tCK
tCK
tCK
µs
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
08/13/2010
21
17
18
V
V
Rev. E
REF
REF