IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 35

• Manufacturer Part Number: IS43R16160B-5TL
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 200 MHz
• Access Time: 0.7 ns
• Supply Voltage (max): 2.7 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 290 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant
• Other names: 706-1085; IS43R16160B-5TL

IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
Integrated Silicon Solution, Inc.
Rev. E
DDR SDRAM (Rev.1.1)
08/13/2010
I
I
[Write interrupted by Precharge]
access is allowed. tWR is referenced from the first positive CLK edge after the last data input.
Burst write operation can be interrupted by precharge of the same or all bank. Random column
Command
A0-9,11,12
BA0,1
/CLK
CLK
A10
DM
DQ
QS
WRITE
Yi
00
0
Preliminary
Preliminary
Dai0 Dai1
Write Interrupted by Precharge (BL=8, CL=2.5)
tWR
PRE
00
256M Double Data Rate Synchronous DRAM
Zentel Electronics Corporation
A3S56D30/40ETP
35