IS61C1024AL-12JI-TR ISSI, IS61C1024AL-12JI-TR Datasheet - Page 3

• Manufacturer Part Number: IS61C1024AL-12JI-TR
• Description: SRAM 1Mb 128Kx8 12ns 5v
• Manufacturer: ISSI
• Type: Asynchronousr

Specifications of IS61C1024AL-12JI-TR

• Product Category: SRAM
• Memory Size: 1 Mbit
• Organization: 128 K x 8
• Access Time: 12 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 40 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: SOJ-32
• Interface: TTL
• Factory Pack Quantity: 1000

IS61C1024AL, IS64C1024AL
ABSOLUTE MAXIMUM RATINGS
t
P
I
CAPACITANCE
c
DC ELECTRICAL CHARACTERISTICS
V
V
V
I
I
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
05/09/2012
Symbol
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
Symbol
c
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol Parameter
V
Note:
1. V
out
lI
lo
stg
term
t
oh
ol
Ih
Il
In
out
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
Il
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Parameter
Input Capacitance
Output Capacitance
(1,2)
a
= 25°c, f = 1 MHz, V
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
DD
DD
DD
(1)
= 5.0V.
= Min., I
= Min., I
In
out
(Over Operating Range)
Conditions
V
≤ V
V
oh
ol
out
≤ V
In
DD
= 8.0 mA
= –4.0 mA
= 0V
DD
1-800-379-4774
= 0V
–0.5 to +7.0
–65 to +150
Value
1.5
20
Max.
5
7
Unit
mA
°C
W
V
Com.
Com.
Auto.
Auto.
Ind.
Ind.
Unit
pF
pF
Min.
–0.3
2.4
2.2
—
–1
–2
–5
–1
–2
–5
V
DD
Max.
0.4
0.8
—
1
2
5
1
2
5
+ 0.5
Unit
µA
µA
V
V
V
V
3