IS42S32800B-7BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7BL Datasheet - Page 50

• Manufacturer Part Number: IS42S32800B-7BL
• Description: IC SDRAM 256MBIT 143MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800B-7BL

• Package / Case: 90-BGA
• Memory Size: 256M (8Mx32)
• Format - Memory: RAM
• Memory Type: SDRAM
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 32 bit
• Organization: 2 Mbit x 32
• Maximum Clock Frequency: 143 MHz
• Access Time: 7 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 150 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1024

IS42S32800B
50
Figure 17.3.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
DQ
A9
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
CAx
Command
Activate
Bank B
RBx
RBx
Auto Precharge
Write with
Command
Bank B
DBx0 DBx1 DBx2 DBx3
CBx
Auto Precharge
Write with
Command
Bank A
CAy
DAy0
DAy1 DAy2
DAy3
Command
Activate
Bank B
RBy
RBy
‘
Integrated Silicon Solution, Inc.
Auto Precharge
Write with
Command
Bank B
DBy0 DBy1 DBy2 DBy3
CBy
07/21/09
Rev. F