IS42S32160C-6BI ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BI Datasheet - Page 27
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IS42S32160C-6BI
Manufacturer Part Number
IS42S32160C-6BI
Description
IC SDRAM 512MB 166MHZ 3.3V 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32160C-6BI.pdf
(60 pages)
Specifications of IS42S32160C-6BI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
Q5246106
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32160C-6BI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32160C
I
Self Refresh Entry & Exit Cycle
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
01/22/09
BS0,1
ADD
DQM
RAS#
CAS#
WE#
CLK
CKE
CS#
Note:To Enter SelfRefresh Mode
1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle.
2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays “low”.
To Exit SelfRefresh Mode
1. System clock restart and be stable before returning CKE high.
2. Enable CKE and CKE should be set high for minimum time of tSRX.
3. CS#starts from high.
4. Minimum tRC is required after CKE going high to complete SelfRefresh exit.
5. 8192 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh.
DQ
Once the device enters SelfRefresh mode,minimum tRAS is required before exit from SelfRefresh.
T0
*Note 8
SelfRefresh Enter
*Note 1
T1
t
IS
Hi-Z
T2
*Note 2
T3
T4
T5
T6
*Note 3
T7
T8
T9
T10
Hi-Z
*Note 4
SelfRefresh Exit
T11
*Note 5
t
*Note 6
SRX
T12
t
RC(min) *Note 7
T13
T14
Auto Refresh
T15
*Note 8
t
T16
PDE
T17
T18
T19
I
27
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