M24512-WMN6TP STMicroelectronics, M24512-WMN6TP Datasheet - Page 25

IC EEPROM 512KBIT 400KHZ 8SOIC

M24512-WMN6TP

Manufacturer Part Number
M24512-WMN6TP
Description
IC EEPROM 512KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of M24512-WMN6TP

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
512K (64K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Density
512Kb
Interface Type
Serial (I2C)
Organization
64Kx8
Access Time (max)
900ns
Frequency (max)
400KHz
Write Protection
Yes
Data Retention
40Year
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
-40C to 85C
Supply Current
5mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8626-2
M24512-WMN6TP

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M24512-R, M24512-W, M24512-DR
Table 11.
1. Sampled only, not 100% tested.
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Table 12.
1. The new M24512-W devices (identified by the process letter K) offer I
2. Only for devices operating at the f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
Symbol
I
I
V
V
Z
I
I
Z
CC0
CC1
V
completion of the internal write cycle t
I
CC
C
C
LO
OL
LI
H
L
IH
IL
IN
IN
(2)
(2)
Input leakage current
(SCL, SDA, E0, E1,
E2)
Output leakage
current
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E0, E1, E2)
Output low voltage
Input capacitance (SDA)
Input capacitance (other pins)
Input impedance
(E2, E1, E0, WC)
Input impedance
(E2, E1, E0, WC)
Input parameters
DC characteristics (voltage range W)
Parameter
Parameter
(1)
Doc ID 16459 Rev 19
c
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
Device not selected
V
= 2.5 V
V
I
OL
max = 1 MHz (see
IN
CC
CC
CC
CC
IN
IN
Test conditions (see
W
= 2.1 mA, V
= V
= V
= V
= 2.5 V, f
= 5.5 V, f
= 2.5 V, f
= 5.5 V, f
(t
W
SS
SS
SS
W
is triggered by the correct decoding of a Write instruction).
, 2.5 V < V
or V
or V
or V
SS
c
c
c
c
or V
CC
CC
CC
Test condition
Table
= 400 kHz
= 400 kHz
= 1 MHz
= 1 MHz
V
V
CC
, V
, V
IN
IN
CC
Table
= 2.5 V
(4)
CC
< 0.3V
> 0.7V
CC
CC
10)
,
= 5.5 V
15)
(2)
(2)
< 5.5 V
Device grade 3
Device grade 6
Table 8
CC
CC
CC
and
= 1.5 mA.
Min.
500
30
DC and AC parameters
0.7V
0.7V
–0.45
Min.
CC
CC
Max.
8
6
V
0.3V
CC
Max.
1
5
± 2
± 2
2.5
2.5
6.5
0.4
2
5
2
5
(1)
(3)
+0.6
CC
Unit
pF
pF
Unit
25/39
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V

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