M25P16-VME6G NUMONYX, M25P16-VME6G Datasheet - Page 27

IC FLASH 16MBIT 75MHZ 8VDFPN

M25P16-VME6G

Manufacturer Part Number
M25P16-VME6G
Description
IC FLASH 16MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheets

Specifications of M25P16-VME6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Base Number
25
Frequency
75MHz
Ic Generic
RoHS Compliant
Memory Configuration
2M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P16-VME6G
Manufacturer:
ST
0
Part Number:
M25P16-VME6G
Manufacturer:
MICRON
Quantity:
20 000
M25P16
6.7
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit
being shifted out, at a maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
1. Address bits A23 to A21 are Don’t care.
S
C
D
Q
S
C
D
Q
and data-out sequence
7
0
32 33 34
1
6
High Impedance
2
Dummy byte
5
Instruction
4
3
35
3
4
36 37 38 39 40 41 42 43 44 45 46
5
2
6
1
0
7
MSB
23
7
8
Figure
22 21
6
9 10
24-bit address
DATA OUT 1
5
C
14.
4
, during the falling edge of Serial Clock (C).
3
28 29 30 31
3
2
2
1
1
0
0
47
MSB
7
6
DATA OUT 2
5
4
3
2
1
Instructions
0
MSB
AI04006
7
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