M25P16-VME6G NUMONYX, M25P16-VME6G Datasheet - Page 41

• Manufacturer Part Number: M25P16-VME6G
• Description: IC FLASH 16MBIT 75MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VME6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Clock Frequency: 75MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: VDFPN
• No. Of Pins: 8
• Base Number: 25
• Frequency: 75MHz
• Ic Generic: RoHS Compliant
• Memory Configuration: 2M X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M25P16
Table 15.
1. Details of how to find the technology process in the marking are given in AN1995, see also
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
8. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4, int(15.3) =16.
Symbol Alt.
t
PP
t
t
Part
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
SE
BE
Applies only to products made with T9HX technology, identified with process digit ‘4’
CH
(7)
+ t
numbering.
CL
must be greater than or equal to 1/ f
AC characteristics (grade 6,
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes, where n = 1
to 4)
Page Program cycle time (n bytes, where n = 5
to 256)
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
A
= 25 °C.
Parameter
C
.
T9HX technology
Table 10
and
Min
) (continued)
Table 12
int(n/8) × 0.02
DC and AC parameters
Typ
0.64
0.01
0.6
13
(2)
Section 12:
(8)
Max
40
5
3
(1)
41/55
Unit
ms
s
s