CY7C1018DV33-10VXI Cypress Semiconductor Corp, CY7C1018DV33-10VXI Datasheet - Page 3

IC SRAM 1MBIT 10NS 32SOJ

CY7C1018DV33-10VXI

Manufacturer Part Number
CY7C1018DV33-10VXI
Description
IC SRAM 1MBIT 10NS 32SOJ
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C1018DV33-10VXI

Memory Size
1M (128K x 8)
Package / Case
32-SOJ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
3.63 V
Supply Voltage (min)
2.97 V
Maximum Operating Current
60 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Memory Configuration
128K X 8
Supply Voltage Range
3V To 3.6V
Memory Case Style
SOJ
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1963-5
CY7C1018DV33-10VXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1018DV33-10VXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05465 Rev. *E
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Notes
C
C
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
IN
OUT
JA
JC
Parameter
Parameter
shown in Figure (c).
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
OUTPUT
[3]
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[3]
Description
Description
Z = 50
(a)
1.5V
50 
[4]
High-Z characteristics:
OUTPUT
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
A
30 pF*
= 25 C, f = 1 MHz, V
3.3V
5 pF
Test Conditions
Test Conditions
(c)
R 317
GND
3.0V
Rise Time: 1 V/ns
CC
= 3.3V
351
R2
10%
90%
ALL INPUT PULSES
Wide SOJ
(b)
400-Mil
CY7C1018DV33
57.61
40.53
Max.
8
8
Fall Time: 1 V/ns
90%
Page 3 of 10
10%
C/W
C/W
Unit
Unit
pF
pF
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