CY7C1018DV33-10VXI Cypress Semiconductor Corp, CY7C1018DV33-10VXI Datasheet - Page 6

• Manufacturer Part Number: CY7C1018DV33-10VXI
• Description: IC SRAM 1MBIT 10NS 32SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1018DV33-10VXI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 2.97 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 128K X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOJ
• No. Of Pins: 32
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1963-5; CY7C1018DV33-10VXI

Document #: 38-05465 Rev. *E
Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
Notes
16. Data I/O is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
18. During this period the I/Os are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
DATA I/O
DATA I/O
WE
WE
CE
CE
OE
NOTE 18
(continued)
t
IH
SA
t
.
HZOE
[16, 17]
t
SA
t
AW
t
AW
t
SCE
t
t
WC
WC
[16, 17]
t
PWE
DATA
t
t
PWE
SD
DATA VALID
t
SCE
IN
t
t
SD
SCE
VALID
t
HD
t
HA
t
HA
t
HD
CY7C1018DV33
Page 6 of 10
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