CY7C1021D-10ZSXI Cypress Semiconductor Corp, CY7C1021D-10ZSXI Datasheet - Page 3

• Manufacturer Part Number: CY7C1021D-10ZSXI
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021D-10ZSXI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 80 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 16b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 80mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1972; CY7C1021D-10ZSXI

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied ............................................ –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Note
Document #: 38-05462 Rev. *H
V
V
V
V
I
I
I
I
I
Parameter
3. V
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IL
(min) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Supply Current
Automatic CE Power Down
Current —TTL Inputs
Automatic CE Power Down
Current —CMOS Inputs
CC
[3]
Operating
..................................... –0.5V to V
[3]
................................. –0.5V to V
CC
IH
Description
(max) = V
to Relative GND
CC
+ 1V for pulse durations of less than 5 ns.
[3]
(Over the Operating Range)
[3]
GND < V
GND < V
I
I
V
I
f = f
Max V
V
Max V
V
or V
....–0.5V to +6.0V
OH
OL
OUT
CC
IN
IN
= 8.0 mA
max
= –4.0 mA
> V
> V
IN
= Max,
= 0 mA,
CC
CC
< 0.3V, f = 0
IH
CC
Test Conditions
= 1/t
I
, CE > V
, CE > V
I
CC
CC
< V
or V
< V
– 0.3V,
+0.5V
+0.5V
RC
CC
CC
IN
, Output Disabled
< V
IH
CC
IL
– 0.3V,
, f = f
100 MHz
83 MHz
66 MHz
40 MHz
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch Up Current .................................................... > 200 mA
Operating Range
Industrial
Automotive
max
Range
–10 (Industrial)
0.5
Min
2.4
2.2
1
1
–40C to +125C
–40C to +85C
Temperature
Ambient
V
CC
Max
0.4
0.8
+1
+1
80
72
58
37
10
+ 0.5V
3
–12 (Automotive)
–0.5
Min
2.4
2.0
–5
–5
5V  10%
5V  10%
V
V
CC
CC
CY7C1021D
Max
0.4
0.8
+5
+5
90
75
48
10
10
+ 0.5V
-
Page 3 of 12
Speed
10 ns
12 ns
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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