M27C512-15F6 STMicroelectronics, M27C512-15F6 Datasheet - Page 11

IC EPROM 512KBIT 150NS 28CDIP

M27C512-15F6

Manufacturer Part Number
M27C512-15F6
Description
IC EPROM 512KBIT 150NS 28CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C512-15F6

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
512K (64K x 8)
Speed
150ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
512K
Organization
64K×8
Package Type
FDIP28W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
85 °C
Temperature, Operating, Minimum
-40 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Interface Type
Parallel
Bus Type
Parallel
In System Programmable
In System/External
Access Time (max)
150ns
Reprogramming Technique
UV
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Supply Current
50mA
Pin Count
28
Mounting
Through Hole
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1676-5

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0
Table 7. Read Mode DC Characteristics
Note: 1. V
Table 8. Read Mode AC Characteristics
Note: 1. V
t
t
Symbol
GHQZ
Symbol
EHQZ
t
t
t
V
t
GLQV
AXQX
AVQV
ELQV
I
I
V
V
I
IH
I
CC1
CC2
I
V
I
LO
CC
PP
OH
LI
OL
2. Maximum DC voltage on Output is V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
IL
(2)
(2)
(2)
CC
CC
t
must be applied simultaneously with or before V
must be applied simultaneously with or before V
ACC
t
t
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Alt
t
t
t
CE
OE
OH
DF
DF
Address Valid to
Output Valid
Chip Enable Low to
Output Valid
Output Enable Low
to Output Valid
Chip Enable High
to Output Hi-Z
Output Enable
High to Output Hi-Z
Address Transition
to Output Transition
Parameter
Parameter
CC
Test Condition
E = V
E = V
+0.5V.
G = V
G = V
E = V
E = V
IL
IL
, G = V
, G = V
IL
IL
IL
IL
PP
PP
I
and removed simultaneously or after V
IL
IL
and removed simultaneously or after V
OUT
(1)
Test Condition
0V
E = V
E > V
0V
I
OH
I
= 0mA, f = 5MHz
I
OL
V
OH
Min
0
0
0
PP
E = V
V
-45
= –100µA
IL
= 2.1mA
V
CC
OUT
= –1mA
, G = V
IN
= V
(3)
Max
– 0.2V
IH
45
45
25
25
25
CC
V
V
CC
CC
IL
(1)
,
Min
0
0
0
-60
Max
M27C512
60
60
30
25
25
V
CC
Min
–0.3
0
0
0
Min
PP
PP
3.6
– 0.7V
2
-70
.
.
Max
70
70
35
30
30
V
Min
CC
Max
±10
±10
100
0
0
0
0.8
0.4
30
10
1
-80
+ 1
M27C512
Max
80
80
40
30
30
Unit
mA
mA
µA
µA
µA
µA
11/22
V
V
V
V
V
Unit
ns
ns
ns
ns
ns
ns

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