M27C512-12F1 STMicroelectronics, M27C512-12F1 Datasheet - Page 14

IC EPROM 512KBIT 120NS 28CDIP

M27C512-12F1

Manufacturer Part Number
M27C512-12F1
Description
IC EPROM 512KBIT 120NS 28CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C512-12F1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
512K (64K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
512K
Organization
64K×8
Package Type
FDIP28W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
120 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
64K X 8
Access Time
120ns
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
28
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1671-5

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DC and AC parameters
Figure 7.
Table 11.
1. T
2. V
Table 12.
1. T
2. V
14/22
Symbol
t
t
t
t
Symbol
t
t
A9HVPH
t
A10HEH
VPXA9X
EXA10X
A10LEH
EXVPX
VPHEL
A
A
CC
CC
V
V
I
V
V
I
V
I
CC
PP
OH
= 25 °C; V
= 25 °C; V
LI
OL
IH
ID
IL
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Q0-Q7
A0-A15
E
G
Read mode AC waveforms
Programming mode DC characteristics
Margin Mode AC Characteristics
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
CC
t
t
t
CC
t
t
t
t
AH10
AS10
AS10
VPH
Alt
VPS
AH9
AS9
= 6.25V ± 0.25V; V
= 6.25V ± 0.25V; V
V
V
V
V
Chip Enable Transition to V
Transition
Chip Enable Transition to V
Transition
V
A9
A10
A10
PP
PP
Parameter
High to V
High to Chip Enable Low
Transition to V
High to Chip Enable High (Set)
Low to Chip Enable High (Reset)
PP
PP
PP
Parameter
= 12.75V ± 0.25V
= 12.75V ± 0.25V
tAVQV
tELQV
High
A9
tGLQV
VALID
Transition
PP
PP
A10
PP
Test Condition
and removed simultaneously or after V
and removed simultaneously or after V
V
I
I
IL
OL
OH
≤ V
E = V
= 2.1mA
= –1mA
IN
IL
≤ V
Condition
IH
(1)(2)
Test
tAXQX
(1)(2)
–0.3
11.5
Min
3.6
2
tEHQZ
tGHQZ
VALID
PP
PP
Min
.
2
2
1
1
1
2
2
.
V
CC
Max
12.5
±10
0.8
0.4
50
50
+ 0.5
AI00735B
Max
Hi-Z
M27C512
Unit
mA
mA
µA
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs

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