ESDALC6-4N4 STMicroelectronics, ESDALC6-4N4 Datasheet - Page 2

• Manufacturer Part Number: ESDALC6-4N4
• Description: TVS Diode Arrays 7V 9.5pF ESD Array 70nA 4-Lines 6V
• Manufacturer: STMicroelectronics
• Series: ESDr

Specifications of ESDALC6-4N4

• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Breakdown Voltage: 6 V
• Clamping Voltage: 10 V
• Peak Surge Current: 2.3 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: + 25 C
• Maximum Operating Temperature: + 25 C
• Capacitance: 9.5 pF
• Case Height: 0.38 mm
• Package / Case: uQFN-4L
• Peak Pulse Power Dissipation: 27 W

Characteristics
1
2/11
Symbol
V
V
I
RM
C
BR
CL
I
V
I
V
R
pp
Characteristics
Table 1.
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2.
Table 2.
RM
R
Symbol
= 1 mA
= 1 A, 8/20 µs
= 0 V, F = 1 MHz, V
V
P
T
= 3 V
I
T
pp
stg
PP
PP
j
Symbol
V
I
V
V
I
RM
PP
BR
RM
CL
ESD IEC 61000-4-2, level 4 (contact discharge)
Peak pulse power dissipation (8/20 µs)
Repetitive peak pulse current typical value (8/20 µs)
Maximum junction temperature
Storage temperature range
=
=
=
=
=
Absolute maximum ratings (T
Electrical characteristics (definitions)
Electrical characteristics (values, T
Test conditions
Clamping voltage
Peak pulse current
Stand-off voltage
Breakdown voltage
Leakage current @ V
Parameter
osc
= 30 mV
Doc ID 022191 Rev 2
Parameter
RM
amb
(1)
V
CL
Min.
= 25 °C)
V
6
amb
BR
Slope: 1/R
T
V
= 25 °C)
RM
j
Typ.
initial = T
9.5
d
Max.
70
10
11
amb
I
F
I
I
I
RM
PP
V
-55 + 150
Unit
F
nA
pF
V
V
Value
125
2.3
11
27
ESDALC6-4N4
V
Unit
kV
W
°C
°C
A