CY62147EV30LL-45ZSXI Cypress Semiconductor Corp, CY62147EV30LL-45ZSXI Datasheet - Page 10
![IC SRAM 4MBIT 45NS 44TSOP](/photos/7/23/72387/428-44-tsop_sml.jpg)
CY62147EV30LL-45ZSXI
Manufacturer Part Number
CY62147EV30LL-45ZSXI
Description
IC SRAM 4MBIT 45NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY62147EV30LL-45ZSXI.pdf
(16 pages)
Specifications of CY62147EV30LL-45ZSXI
Memory Size
4M (256K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
20 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2073
CY62147EV30LL-45ZSXI
CY62147EV30LL-45ZSXI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62147EV30LL-45ZSXI
Manufacturer:
CYPRESS
Quantity:
2 100
Part Number:
CY62147EV30LL-45ZSXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Truth Table
Document Number: 38-05440 Rev. *J
Notes
CE
34. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
35. For the Dual Chip Enable device, CE refers to the internal logical combination of CE
CE
other cases CE is HIGH. Intermediate voltage levels is not permitted on any of the Chip Enable pins (CE for the Single Chip Enable device; CE
Chip Enable device).
[34, 35]
H
L
L
L
L
L
L
L
L
L
L
2
such that when CE
WE
H
H
H
H
H
H
X
X
L
L
L
OE
1
H
H
H
X
X
L
L
L
X
X
X
is LOW and CE
BHE
X
H
H
H
H
L
L
L
L
L
L
2
is HIGH, CE is LOW. For all other cases CE is HIGH.
BLE
X
H
H
H
H
L
L
L
L
L
L
High Z
High Z
Data out (I/O
Data out (I/O
I/O
Data out (I/O
I/O
High Z
High Z
High Z
Data in (I/O
Data in (I/O
I/O
Data in (I/O
I/O
8
0
8
0
–I/O
–I/O
–I/O
–I/O
15
7
15
7
in High Z
in High Z
in High Z
in High Z
0
0
8
I/Os
–I/O
–I/O
–I/O
0
0
8
–I/O
–I/O
–I/O
15
7
15
);
15
7
15
)
);
);
)
);
1
and CE
Deselect/Power-down
Deselect/Power -down
Read
Read
Read
Output disabled
Output disabled
Output disabled
Write
Write
Write
2
such that when CE
Mode
1
is LOW and CE
CY62147EV30 MoBL
Standby (I
Standby (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
2
is HIGH, CE is LOW. For all
CC
CC
CC
CC
CC
CC
CC
CC
CC
1
Power
and CE
SB
SB
)
)
)
)
)
)
)
)
)
)
)
Page 10 of 16
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for the Dual
1
and
®
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