CY62147EV30LL-45ZSXI Cypress Semiconductor Corp, CY62147EV30LL-45ZSXI Datasheet - Page 14

• Manufacturer Part Number: CY62147EV30LL-45ZSXI
• Description: IC SRAM 4MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62147EV30LL-45ZSXI

• Memory Size: 4M (256K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 20 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2073; CY62147EV30LL-45ZSXI

Document History Page
Document Number: 38-05440 Rev. *J
Document Title: CY62147EV30 MoBL
Document Number: 38-05440
Rev.
*G
*A
*B
*C
*D
*E
*F
*H
**
*I
ECN No.
1045701
2577505
2681901
2886488
3109050
201861
247009
414807
464503
925501
VKN/PYRS
VKN/PYRS
12/13/2010
Change
Orig. of
NXR
VKN
VKN
AJU
SYT
ZSD
AJU
Submission
03/02/2010
See ECN
See ECN
See ECN
See ECN
See ECN
01/13/04
10/03/08
04/01/09
®
PRAS
Date
4-Mbit (256K x 16) Static RAM
New Data Sheet
Changed from Advanced Information to Preliminary
Moved Product Portfolio to Page 2
Changed Vcc stabilization time in footnote #8 from 100 s to 200 s
Removed Footnote #15(t
Changed I
Changed typo in Data Retention Characteristics(t
Changed t
Changed t
18 ns for 45 ns Speed Bin
Changed t
for 45 ns Speed Bin
Changed t
Speed Bin
Changed t
45 ns Speed Bin
Changed t
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin, “L” version of CY62147EV30
Changed ball E3 from DNU to NC.
Removed redundant foot note on DNU.
Changed I
1.5 mA to 2 mA at f=1 MHz
Changed I
Changed I
2.5 A to 7 A.
Changed I
Added I
Changed AC test load capacitance from 50 pF to 30 pF on Page #4, changed
t
changed t
changed t
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering information table and replaced the Package Name column
with Package Diagram.
Included Automotive Range in product offering
Updated the Ordering Information
Added Preliminary Automotive-A information
Added footnote #9 related to I
Added footnote #14 related AC timing parameters
Converted Automotive-A and Automotive -E specs from preliminary to final
Added -45B2XI part (Dual CE option)
Added CY62147EV30LL-45ZSXA in the ordering information table
Updated package diagrams.
Added Contents.
Updated links in
Added Note 23.
Changed Table Footnotes to Footnotes.
Added Ordering Code Definitions.
LZOE
from 3 ns to 5 ns, changed t
CCDR
HZCE
SD
HZCE
CCDR
OHA
HZOE
SCE
SD
DOE
CC
CC
SB1
CCDR
from 22 ns to 25 ns.
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
typical value.
(Max) value from 2 mA to 2.5 mA and I
(Typ) value from 12 mA to 15 mA at f = f
and I
and t
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
from 15 to 18 ns for 35 ns Speed Bin
, t
from 22 ns to 18 ns, changed t
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
from 2.0 A to 2.5 A
from 2.5 A to 7 A.
Sales, Solutions, and Legal
HZBE
SB2
BW
, t
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns
Typ values from 0.7 A to 1 A and Max values from
HZWE
LZBE
Description of Change
) from Previous Revision
SB2
from 12 to 15 ns for 35 ns Speed Bin and 15 to
and I
LZCE
, t
CCDR
LZBE
CY62147EV30 MoBL
Information.
and t
PWE
R
) from 100 s to t
LZWE
from 30 ns to 35 ns and
CC
max
(Typ) value from
from 6 ns to 10 ns,
Page 14 of 16
RC
ns
®
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