VS-HFA30TA60CPBF Vishay Semiconductors, VS-HFA30TA60CPBF Datasheet

VS-HFA30TA60CPBF

Manufacturer Part Number

VS-HFA30TA60CPBF

Description

Rectifiers 600 Volt 2x15 Amp Common Cathode

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA30TA60CPBF.pdf (8 pages)

Specifications of VS-HFA30TA60CPBF

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Dual Common Cathode

Reverse Voltage

600 V

Forward Voltage Drop

2 V

Recovery Time

60 ns

Forward Continuous Current

30 A

Max Surge Current

150 A

Reverse Current Ir

10 uA

Mounting Style

Through Hole

Package / Case

TO-220AB

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

VS-HFA30TA60CPBF

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 8
Download datasheet (202Kb)

Revision: 17-Aug-11

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

max.

typ.

at I

www.vishay.com

Anode

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

TO-220AB

common

Common

cathode

Ultrafast Soft Recovery Diode, 2 x 15 A

cathode

Base

Anode

Common cathode

per device

TO-220AB

2 x 15 A

150 °C

per leg

600 V

19 ns

1.7 V

VS-HFA30TA60CPbF, VS-HFA30TA60C-N3

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed

• Halogen-free according to IEC 61249-2-21

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA30TA60C... is a state of the art center tap ultrafast

recovery

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 600 V and 15 A

per leg continuous current, the VS-HFA30TA60C... is

especially well suited for use as the companion diode for

IGBTs and MOSFETs. In addition to ultrafast recovery time,

the HEXFRED

peak recovery current (I

tendency to “snap-off” during the t

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED

applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.

JEDEC-JESD47

definition (-N3 only)

www.vishay.com/doc?91000

diode.

RRM

VS-HFA30TA60C...

and

product line features extremely low values of

and Q

Employing

qualified

Vishay Semiconductors

- 55 to + 150

RRM

VALUES

600

150

DiodesEurope@vishay.com

) and does not exhibit any

the

according

portion of recovery. The

Document Number: 94070

latest

ideally

UNITS

suited

°C

epitaxial

for

Related parts for VS-HFA30TA60CPBF

VS-HFA30TA60CPBF Summary of contents

Page 1

... Operating junction and storage temperature range Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C-N3 ® HEXFRED FEATURES • Ultrafast and ultrasoft recovery • ...

Page 2

... Marking device Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C- °C unless otherwise specified) J TEST CONDITIONS I = 100 μA ...

Page 3

... Fig Maximum Thermal Impedance Z Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C-N3 10 000 1000 100 T = 150 °C ...

Page 4

... F Fig Typical Recovery Current vs. dI Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C-N3 800 ...

Page 5

... F through 0.75 I extrapolated to zero current. Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C- 200 V R 0.01 Ω μH D.U.T. D ...

Page 6

... VS-HFA30TA60CPbF 50 VS-HFA30TA60C-N3 50 Dimensions Part marking information Revision: 17-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-HFA30TA60CPbF, VS-HFA30TA60C- ...

Page 7

... Dimensions define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Outline Dimensions Vishay Semiconductors Thermal pad ( ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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