LS4151-GS18 Vishay Semiconductors, LS4151-GS18 Datasheet - Page 2

• Manufacturer Part Number: LS4151-GS18
• Description: Diodes - General Purpose, Power, Switching 75 Volt 150mA 2.0 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of LS4151-GS18

• Product Category: Diodes - General Purpose, Power, Switching
• Rohs: yes
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.3 A
• Max Surge Current: 2 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.05 uA
• Operating Temperature Range: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-80-2
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000

TYPICAL CHARACTERISTICS (T
Rev. 1.7, 31-Jul-12
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse voltage
Breakdown voltage
Diode capacitance
Reverse recovery time
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Fig. 1 - Reverse Current vs. Junction Temperature
94 9151
94 9152
Fig. 2 - Forward Current vs. Forward Voltage
1000
0.01
100
100
0.1
0.1
10
10
1
1
0
0
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Scattering Limit
T = 100 °C
40
T
0.4
j
j
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
V - Forward Voltage (V)
- Junction Temperature (°C)
F
0.8
80
T = 25 °C
j
120
1.2
i
R
V
I
I
R
F
R
= 0.1 x I
TEST CONDITION
V
V
= 5 μA, t
= 10 mA, V
= 50 V, T
I
R
amb
R
F
V
= 0, f = 1 MHz,
= I
t
I
= 50 V
160
HF
1.6
F
V
p
i
R
R
= 50 mA
= 0.3 ms
R
= 25 °C, unless otherwise specified)
= 1 mA
= 50 mV
= 50 V
R
= 10 mA,
, R
p
amb
j
/T = 0.01,
200
= 150 °C
L
2.0
R
= 100 
= 6 V,
= 25 °C, unless otherwise specified)
2
SYMBOL
V
C
V
I
I
(BR)
t
t
R
R
rr
rr
F
D
94 9153
Fig. 3 - Diode Capacitance vs. Reverse Voltage
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3.0
2.5
2.0
1.5
1.0
0.5
MIN.
75
0
0.1
V
Vishay Semiconductors
R
- Reverse Voltage (V)
0.880
TYP.
1
[e-mail]
T
f = 1 MHz
j
= 25 °C
Document Number: 85563
10
MAX.
50
50
1
2
4
2
LS4151
100
UNIT
nA
μA
pF
ns
ns
V
V