IDT709269S12PF IDT, Integrated Device Technology Inc, IDT709269S12PF Datasheet - Page 4

• Manufacturer Part Number: IDT709269S12PF
• Description: IC SRAM 256KBIT 12NS 100TQFP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT709269S12PF

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 256K (16K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 709269S12PF; 800-1371

Absolute Maximum Ratings
Truth Table II—Address Counter Control
NOTES:
1. "H" = V
2. CE
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS is independent of all other signals including CE
5. The address counter advances if CNTEN = V
Recommended Operating
Temperature and Supply Voltage
NOTES:
1. This is the parameter T
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselect.
Commercial
Industrial
I
V
T
T
T
OUT
BIAS
STG
JN
IDT709279/69S/L
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM
TERM
Address
External
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
maximum, and is limited to < 20mA for the period of V
Symbol
An
TERM
X
X
X
0
(2)
, LB, UB, and OE = V
Grade
must not exceed V
IH,
"L" = V
Previous
Address
Internal
An + 1
Terminal Voltage
with Respect
to GND
TemperatureUnder Bias
Storage Temperature
Junction Temperature
DC Output Current
An
X
X
IL,
"X" = Don't Care.
A
-40
Rating
0
. This is the "instant on" case temperature.
Address
Temperature
CC
Internal
An + 1
An + 1
O
IL
Used
Ambient
C to +70
O
; CE
+ 10% for more than 25% of the cycle time or 10ns
An
A
C to +85
0
1
and R/W = V
O
C
O
CLK
C
↑
↑
↑
↑
IL
GND
0V
0V
Commercial
ADS
& Industrial
IH
-0.5 to +7.0
-55 to +125
-65 to +150
on the rising edge of CLK, regardless of all other signals including CE
X
L
H
H
.
(4)
+150
0
50
, CE
TERM
CNTEN
1
(1)
, UB and LB.
X
L
H
X
5.0V
5.0V
> V
(5)
V
CC
+
+
CC
+ 10%.
CNTRST
10%
10%
3243 tbl 06
3243 tbl 04
Unit
mA
L
o
o
o
V
H
H
H
C
C
C
(4)
(1)
6.42
4
D
D
NOTES:
1. V
2. V
Recommended DC Operating
Conditions
Capacitance
(T
NOTES:
1. These parameters are determined by device characterization, but are not
2. C
D
D
I/O
I/O
I/O
I/O
I/O
Symbol
Symbol
(n+1)
(n+1)
C
A
GND
production tested.
(3)
(0)
V
(n)
V
V
OUT
C
TERM
IL
CC
OUT
(1,2)
IH
IL
= +25°C, f = 1.0MH
IN
> -1.5V for pulse width less than 10ns.
(2)
also references C
must not exceed V
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disabled (An + 1 reused)
Counter Reset to Address 0
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Capacitance
Output Capacitance
Industrial and Commercial Temperature Ranges
Parameter
Parameter
I/O
(1)
CC
.
+ 10%.
0
, CE
z
)
MODE
1
, UB and LB.
Conditions
-0.5
V
Min.
4.5
2.2
V
0
OUT
IN
(2)
= 0V
= 0V
Typ.
5.0
____
____
(2)
0
Preliminary
Max.
6.0
Max.
5.5
0.8
10
9
0
(1)
3243 tbl 03
3243 tbl 05
3243 tbl 07
Unit
Unit
pF
pF
V
V
V
V