IDT70914S20PF IDT, Integrated Device Technology Inc, IDT70914S20PF Datasheet - Page 4

• Manufacturer Part Number: IDT70914S20PF
• Description: IC SRAM 36KBIT 20NS 80TQFP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70914S20PF

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 36K (4K x 9)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 80-TQFP, 80-VQFP
• Density: 36Kb
• Access Time (max): 20ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 50MHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 12b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 2
• Supply Current: 290mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 80
• Word Size: 9b
• Number Of Words: 4K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 70914S20PF; 800-1370

Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
Capacitance
(T
NOTES:
1. These parameters are determined by device characterization, but are not
2. 3dV references the interpolated capacitance when the input and output switch
NOTE:
1. At V
I
V
V
T
T
OUT
IDT70914S
High-Speed 36K (4K x 9) Synchronous Dual-Port Static RAM
Symbol
BIAS
STG
TERM
TERM
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
maximum, and is limited to < 20mA for the period of V
Symbol
production tested.
from 0V to 3V or from 3V to 0V.
A
TERM
C
Symbol
C
OUT
V
V
= +25°C, f = 1.0MH
|I
IN
|I
(2)
(2)
CC
LO
OL
OH
LI
must not exceed V
|
|
< 2.0V, input leakages are undefined
Under Bias
Storage
DC Output
Current
Terminal Voltage
with Respect
to GND
Terminal Voltage
Temperature
Temperature
Input Capacitance
Output Capacitance
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Rating
Parameter
CC
+ 10% for more than 25% of the cycle time or 10ns
Parameter
Commercial
& Industrial
-0.5 to +7.0
-55 to +125
-65 to +150
z
-0.5 to V
)
(1)
TQFP Only
50
V
Conditions
V
CC
OUT
IN
= 3dV
= 3dV
TERM
-0.5 to +7.0
-65 to +135
-65 to +150
-0.5 to V
Military
(1)
50
> V
Max.
cc
I
I
V
CE = V
CC
OL
OH
8
9
CC
+ 10%.
= +4mA
= -4mA
= 5.5V, V
3490 tbl 01
3490 tbl 04
Unit
IH
Unit
mA
o
o
V
V
pF
pF
, V
C
C
OUT
6.42
IN
4
= 0V to V
= 0V to V
Maximum Operating Temperature
and Supply Voltage
NOTES:
1. This is the parameter T
2. Industrial temperature: for specific speeds, packages and powers contact your
Recommended DC Operating
Conditions
NOTES:
1. V
2. V
Military
Commercial
Industrial
Symbol
GND
Test Conditions
V
IL
TERM
V
V
CC
IH
IL
Military, Industrial and Commercial Temperature Ranges
> -1.5V for pulse width less than 10ns.
(V
Grade
CC
CC
must not exceed V
CC
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
= 5.0V ± 10%)
Parameter
A
-55
. This is the "instant on" casae temperature.
-40
CC
0
Temperature
O
O
Ambient
C to +70
O
C to+125
+ 10%.
C to +85
O
C
O
O
C
C
(1,2)
-0.5
Min.
2.2
4.5
Min.
0
2.4
GND
___
___
___
(1)
0V
0V
0V
70914S
Typ.
5.0
____
____
0
Max.
0.4
5.0V
5.0V
5.0V
10
10
___
Max.
6.0
5.5
0.8
V
0
+
+
+
CC
(2)
10%
10%
10%
3490 tbl 05
3490 tbl 02
3490 tbl 03
Unit
µ A
µ A
Unit
V
V
V
V
V
V