IDT70914S20PF IDT, Integrated Device Technology Inc, IDT70914S20PF Datasheet - Page 9

• Manufacturer Part Number: IDT70914S20PF
• Description: IC SRAM 36KBIT 20NS 80TQFP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70914S20PF

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 36K (4K x 9)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 80-TQFP, 80-VQFP
• Density: 36Kb
• Access Time (max): 20ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 50MHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 12b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 2
• Supply Current: 290mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 80
• Word Size: 9b
• Number Of Words: 4K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 70914S20PF; 800-1370

Timing Waveform of Read-to-Write Cycle No. 1
Timing Waveform of Read-to-Write Cycle No. 2
NOTES:
1. For t
2. OE LOW throughout.
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4. For t
IDT70914S
High-Speed 36K (4K x 9) Synchronous Dual-Port Static RAM
be repeated on the second write clock rising edge. If CE = V
be repeated.
ADDRESS
ADDRESS
DATA
DATA
CYC
CYC
CLKEN
DATA
CLKEN
DATA
> min.; OE may be used to avoid data out coincident with the rising edge of the subsequent write clock. Use of OE will eliminate the need for the write to
= min.; data out coincident with the rising edge of the subsequent write clock can occur. To ensure writing to the correct address location, the write must
CLK
R/W
CLK
R/W
OUT
OUT
CE
OE
CE
IN
IN
An
An
t
CKLZ
t
t
CH
CKLZ
(3)
(3)
t
t
CD
CD
t
t
CH
CYC
t
t
CL
OHZ
An + 1
(1)
IL
, invalid data will be written into array. The An+1 must be rewritten on the following cycle.
t
CYC
Qn
Qn
(4)
t
CH
6.42
9
t
CKHZ
t
CL
t
CYC
(3)
Military, Industrial and Commercial Temperature Ranges
t
CL
An + 1
Dn + 1
An + 1
Dn + 1
t
t
S
S
(1)
(1)
(1,2)
(4)
t
(t
H
t
H
(t
CYC
CYC
> min.)
= min.)
An + 2
Dn + 2
3490 drw 10
3490 drw 11