CY7C1412AV18-167BZC Cypress Semiconductor Corp, CY7C1412AV18-167BZC Datasheet - Page 14
CY7C1412AV18-167BZC
Manufacturer Part Number
CY7C1412AV18-167BZC
Description
IC SRAM 36MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1412AV18-167BZC.pdf
(25 pages)
Specifications of CY7C1412AV18-167BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (2M x 18)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
Q2668730
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1412AV18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05615 Rev. *C
TAP Controller Block Diagram
TAP Electrical Characteristics
V
V
V
V
V
V
I
Note:
10. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
X
TDI
OH1
OH2
OL1
OL2
IH
IL
Parameter
TCK
TMS
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and OutputLoad Current
Selection
Circuitry
Description
Over the Operating Range
106
31
Boundary Scan Register
30
.
Identification Register
Instruction Register
TAP Controller
29
.
I
I
I
I
GND ≤ V
OH
OH
OL
OL
.
.
= 2.0 mA
= 100 µA
= −2.0 mA
= −100 µA
Test Conditions
.
.
[15, 18, 10]
I
≤ V
Bypass Register
2
2
2
DD
1
1
1
0
0
0
0
0.65V
Min.
–0.3
1.4
1.6
−5
DD
Selection
Circuitry
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
V
0.35V
DD
Max.
0.4
0.2
5
+ 0.3
DD
Page 14 of 25
TDO
Unit
µA
V
V
V
V
V
V
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