CY7C1412AV18-167BZC Cypress Semiconductor Corp, CY7C1412AV18-167BZC Datasheet - Page 22

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CY7C1412AV18-167BZC

Manufacturer Part Number
CY7C1412AV18-167BZC
Description
IC SRAM 36MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1412AV18-167BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (2M x 18)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
Q2668730

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1412AV18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05615 Rev. *C
Switching Waveforms
Read/Write/Deselect Sequence
Notes:
28. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1.
29. Output are disabled (High-Z) one clock cycle after a NOP.
30. In this example, if address A2 = A1,then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole
CQ
Q
C
diagram.
RPS
WPS
C
CQ
A
D
K
K
D10
A0
1
READ
t KHCH
t KH
t KH
t SA t HA
D11
A1
WRITE
2
t KHCH
t KL
t KL
[28, 29, 30]
t
t SA t HA
SC t
D30
A2
3
READ
t HC
t KHKH
t CQOH
t CLZ
t CO
t SD
t CYC
A3
D31
4
WRITE
t HD
t CQOH
t CCQO
D50
A4
5
t CYC
READ
Q00
t KHKH
t DOH
t CCQO
D51
A5
WRITE
6
Q01
t CQDOH
t SD t HD
D60
7
NOP
Q20
A6
D61
WRITE
8
Q21
t CQD
DON’T CARE
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
NOP
9
Q40
t
CHZ
UNDEFINED
10
Page 22 of 25
Q41
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