VS-MBR745PBF Vishay Semiconductors, VS-MBR745PBF Datasheet - Page 3

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VS-MBR745PBF

Manufacturer Part Number
VS-MBR745PBF
Description
Schottky Diodes & Rectifiers 7.5 Amp 45 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MBR745PBF

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
7.5 A
Max Surge Current
690 A
Configuration
Single
Forward Voltage Drop
0.84 V at 15 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-220AC
Factory Pack Quantity
50
RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 14-Jun-12
A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
175
150
125
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
75
50
25
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
8
6
4
2
0
1
0
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 1 - Forward Current Derating Curve
T
J
= 125 °C
MBR750 & MBR760
Instantaneous Forward Voltage (V)
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MBR735 - MBR745
Number of Cycles at 60 Hz
Case Temperature (°C)
50
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
T
8.3 ms Single Half Sine-Wave
J
Resistive or Inductive Load
10
= T
T
J
J
= 25 °C
Max.
Pulse Width = 300 µs
1 % Duty Cycle
MBR750 & MBR760
100
MBR735 - MBR745
100
150
3
MBR(F,B)735 thru MBR(F,B)760
10 000
0.001
1000
100
0.01
100
100
0.1
10
0.1
10
10
1
0.01
1
0.1
0
Fig. 6 - Typical Transient Thermal Impedance
www.vishay.com/doc?91000
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
MBR750 & MBR760
MBR735 - MBR745
20
MBR750 & MBR760
MBR735 - MBR745
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
40
DiodesEurope@vishay.com
1
60
T
T
10
J
J
Document Number: 88680
= 125 °C
= 75 °C
T
f = 1.0 MHz
V
J
sig
T
10
= 25 °C
J
= 50 mVp-p
= 25 °C
80
100
100
100

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