NAND32GW3F4AN6E NUMONYX, NAND32GW3F4AN6E Datasheet - Page 5

• Manufacturer Part Number: NAND32GW3F4AN6E
• Description: IC FLASH 32GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND32GW3F4AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 32G (4G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND32GW3F4A
1
Table 1.
Density
Gbits
32
width
Bus
x8
Description
The NAND32GW3F4A is part of the single level cell (SLC), 4224-byte page family of non-
volatile NAND flash memories. The device has a density of 32 Gbits and combines four 8-
Gbit dice in a stacked device. The four 8-Gbit dice are coupled for access as two 16-Gbit
devices, each with its own Chip Enable and Ready/Busy pin. This means each 16-Gbit can
be driven independently using the relative Chip Enable pin. The device operates from a 3 V
power supply.
In addition, each 16-Gbit device has its own maximum number of bad blocks and its own
electronic signature code.
This document must be read in conjunction with the NANDxxGW3F2A datasheet, which
fully details all the specifications required to operate this 8-Gbit/16-Gbit flash memory
device.
The device is available in TSOP48 (12 × 20 mm) package and is shipped from the factory
with block 0 always valid and the memory content bits, in valid blocks, erased to ‘1’.
Refer to
Device summary
128 bytes
Page size
4096+
Table 8: Ordering information scheme
Block size Memory array
8K bytes
256K +
16384 blocks
64 pages x
Operating
voltage
2.7 to
3.6 V
(V
DD
)
for information on how to order this device.
Random
access
25 µs
(max)
time
Sequential
time (min)
access
25 ns
Timings
program
500 µs
Page
(typ)
1.5 ms TSOP48
Block
erase
(typ)
Description
Package
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