MR0A08BYS35 EverSpin Technologies Inc, MR0A08BYS35 Datasheet - Page 6
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MR0A08BYS35
Manufacturer Part Number
MR0A08BYS35
Description
IC MRAM 1MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheet
1.MR0A08BYS35.pdf
(15 pages)
Specifications of MR0A08BYS35
Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Word Size
8b
Organization
128Kx8
Density
1Mb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 70C
Pin Count
44
Mounting
Surface Mount
Supply Current
65mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
819-1002
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MR0A08BYS35R
Manufacturer:
EVERSPIN
Quantity:
20 000
Everspin Technologies © 2009
Electrical Specifications
1
Parameter
Input leakage current
Output leakage current
Output low voltage
Output high voltage
Parameter
AC active supply current - read modes
AC active supply current - write modes
AC standby current
CMOS standby current
All active current measurements are measured with one address transition per cycle and at minimum cycle time.
(I
(I
(I
(I
(I
(V
MR0A08B (Commercial)
MR0A08BC (Industrial)
MR0A08BM (Automotive)
(V
no other restrictions on other inputs
(E ≥ V
(V
OL
OL
OL
OL
OUT
DD
DD
DD
= +4 mA)
= +100 μA)
= -4 mA)
= -100 μA)
= 0 mA, V
= max)
= max, E = V
= max, f = 0 MHz)
DD
- 0.2 V and V
DD
= max)
IH
)
In
≤
V
SS
+ 0.2 V or ≥ V
Table 2.4 Power Supply Characteristics
Symbol
I
I
V
V
lkg(I)
lkg(O)
Table 2.3 DC Characteristics
1
OL
OH
1
DD
- 0.2 V)
Min
-
-
-
2.4
V
DD
6
- 0.2
Symbol
I
I
I
I
DDR
DDW
SB1
SB2
Document Number: MR0A08B Rev. 2, 6/2009
Typical
-
-
-
-
Typical
25
55
55
TBD
6
5
Max
±1
±1
0.4
V
-
Max
30
65
70
TBD
7
6
SS
MR0A08B
+ 0.2
Unit
μA
μA
V
V
Unit
mA
mA
mA
mA