MR2A16ACYS35 EverSpin Technologies Inc, MR2A16ACYS35 Datasheet - Page 7

• Manufacturer Part Number: MR2A16ACYS35
• Description: IC MRAM 4MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR2A16ACYS35

• Memory Size: 4M (256K x 16)
• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Memory Configuration: 256K X 16
• Access Time: 35ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1011; MR2A16ACYS35

Timing Specifications
Read Mode
Freescale Semiconductor
NOTES:
Read cycle time
Address access time
Enable access time
Output enable access time
Byte enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Byte enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
Byte high to output Hi-Z
1
2
3
4
5
W is high for read cycle.
Due to product sensitivities to noise, power supplies must be properly grounded and
decoupled, and bus contention conditions must be minimized or eliminated during read and
write cycles.
Addresses valid before or at the same time E goes low.
This parameter is sampled and not 100% tested.
Transition is measured ±200 mV from steady-state voltage.
Parameter
MR0A16A Advanced Information Data Sheet, Rev. 0
3
4, 5
Table 9. Read Cycle Timing
4, 5
4, 5
4, 5
4, 5
4, 5
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
GHQZ
GLQV
AXQX
GLQX
EHQZ
BHQZ
AVQV
ELQV
BLQV
ELQX
BLQX
AVAV
1, 2
Min
35
—
—
—
—
3
3
0
0
0
0
0
Max
—
35
35
15
15
—
—
—
—
15
10
10
Timing Specifications
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7