MR2A16ACYS35 EverSpin Technologies Inc, MR2A16ACYS35 Datasheet - Page 9

IC MRAM 4MBIT 35NS 44TSOP

MR2A16ACYS35

Manufacturer Part Number
MR2A16ACYS35
Description
IC MRAM 4MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheets

Specifications of MR2A16ACYS35

Memory Size
4M (256K x 16)
Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Memory Configuration
256K X 16
Access Time
35ns
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1011
MR2A16ACYS35

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MR2A16ACYS35
Manufacturer:
EVERSPIN
Quantity:
9 000
Part Number:
MR2A16ACYS35
Manufacturer:
EVERSPI
Quantity:
20 000
Write Mode
Freescale Semiconductor
NOTES:
Write cycle time
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
Write pulse width (G low)
Data valid to end of write
Data hold time
Write low to data Hi-Z
Write high to output active
Write recovery time
1
2
3
4
5
6
7
8
9
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested.
Transition is measured ±200 mV from steady-state voltage.
At any given voltage or temperature, t
6
Table 10. Write Cycle Timing 1 (W Controlled)
Parameter
7, 8, 9
MR0A16A Advanced Information Data Sheet, Rev. 0
7, 8, 9
WLQZ
max < t
WHQX
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
WLWH
WLWH
WHDX
WHQX
AVWH
AVWH
WLEH
WLEH
DVWH
WLQZ
WHAX
AVWL
AVAV
min.
Min
35
18
20
15
15
10
12
0
0
0
3
1, 2, 3, 4, 5
Max
12
Timing Specifications
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9

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