M58BW16FB5T3T NUMONYX, M58BW16FB5T3T Datasheet - Page 50

• Manufacturer Part Number: M58BW16FB5T3T
• Description: IC FLASH 16MBIT 55NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW16FB5T3T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.3 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M58BW16FB5T3TCT

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Table 19.
1. Output Enable G may be delayed up to t
Symbol
t
ELQV
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
GHQX
GHQZ
AVQV
AXQX
EHQX
EHQZ
GLQV
GLQX
EHLX
LHAX
LLQV
LLQX
ELQX
AVAV
LHLL
LLLH
increasing t
(1)
Address Valid to Address Valid
Address Valid to Output Valid
Address Transition to Output Transition
Chip Enable High to Latch Enable
Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
Latch Enable High to Address
Transition
Latch Enable High to Latch Enable Low
Latch Enable Low to Latch Enable High
Latch Enable Low to Output Valid
Chip Enable Low to Output Valid
Latch Enable Low to Output Transition
Chip Enable Low to Output Transition
ELQV
Asynchronous Bus Read AC characteristics
.
Parameter
ELQV
- t
GLQV
after the falling edge of Chip Enable E without
E = V
E = V
E = V
E = V
L = V
L = V
Test condition
G = V
G = V
G = V
E = V
E = V
E = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
, G = V
, G = V
, G = V
, G = V
, G = V
, G = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
M58BWxxF
45
45
45
20
45
15
15
10
10
45
0
0
0
0
0
5
0
0
55
55
55
20
55
15
15
10
10
55
0
0
0
0
0
5
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns