FESE16DT-E3/45 Vishay Semiconductors, FESE16DT-E3/45 Datasheet - Page 2

• Manufacturer Part Number: FESE16DT-E3/45
• Description: Rectifiers 16 Amp 200 Volt
• Manufacturer: Vishay Semiconductors

Specifications of FESE16DT-E3/45

• Product Category: Rectifiers
• Rohs: yes
• Product: Ultra Fast Recovery Rectifiers
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.975 V
• Recovery Time: 35 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 250 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Package / Case: TO-220AC-2
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C

Notes
(1)
(2)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 01-Feb-13
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum
instantaneous
forward voltage
Maximum DC reverse
current
Maximum reverse
recovery time
Typical junction
capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
A
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width  40 ms
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
20
16
12
For technical questions within your region: [e-mail], [e-mail],
0
8
4
Fig. 1 - Maximum Forward Current Derating Curve
0
www.vishay.com
Case Temperature (°C)
50
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PREFERRED P/N
FESE16GT-E3/45
TEST CONDITIONS
16 A
at
rated
V
I
I
4.0 V, 1 MHz
F
rr
R
= 0.5 A, I
= 0.25 A
Resistive or Inductive Load
T
T
SYMBOL
C
C
R
R
= 25 °C
= 100 °C
R
= 1.0 A,
JA
100
JC
(1)
A
SYMBOL FESE16AT FESE16BT FESE16CT FESE16DT FESE16FT FESE16GT UNIT
FESE16AT
= 25 °C unless otherwise noted)
V
I
R
C
A
UNIT WEIGHT (g)
F
t
rr
(2)
150
J
(1)
= 25 °C unless otherwise noted)
1.86
FESE16BT
2
PACKAGE CODE
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
FESE16CT
300
250
200
150
100
0.975
50
35
0
45
1
FESE16AT thru FESE16GT
www.vishay.com/doc?91000
Vishay General Semiconductor
1.2
50
FESE16DT
500
175
D
10
Number of Cycles at 60 Hz
/dT
BASE QUANTITY
J
< 1/R
50/tube
8.3 ms Single Half Sine-Wave
[e-mail]
JA
10
FESE16FT
(JEDEC Method)
T
J
= T
Document Number: 89983
J
max.
1.30
DELIVERY MODE
50
FESE16GT
Tube
100
UNIT
°C/W
μA
pF
ns
V