VS-HFA60EA120P Vishay Semiconductors, VS-HFA60EA120P Datasheet

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VS-HFA60EA120P

Manufacturer Part Number
VS-HFA60EA120P
Description
Rectifiers 1200 Volt 60 Amp Dual 350A IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-HFA60EA120P.pdf (8 pages)

Specifications of VS-HFA60EA120P

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Anti-Parallel
Reverse Voltage
1200 V
Forward Voltage Drop
3.8 V at 60 A
Recovery Time
145 ns
Forward Continuous Current
30 A
Max Surge Current
350 A
Reverse Current Ir
75 uA
Mounting Style
SMD/SMT
Package / Case
SOT-227
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
180

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
VS-HFA60EA120P
Quantity:
180
Document Number: 94610
Revision: 06-Aug-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Forward voltage
Reverse leakage current
V
I
t
F(DC)
rr
F
(typical)
(typical)
V
R
at T
C
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Ultrafast Soft Recovery Diode, 60 A
SYMBOL
V
V
I
RM
FM
BR
30 A at 120 °C
1200 V
145 ns
2.2 V
J
I
I
I
I
V
T
SYMBOL
R
F
F
F
R
J
T
= 25 °C unless otherwise specified)
= 30 A
= 60 A
= 60 A, T
= 100 μA
V
J
= 150 °C, V
I
I
= V
FSM
FRM
, T
P
V
ISOL
I
F
R
D
Stg
R
TEST CONDITIONS
rated
HEXFRED
J
= 150 °C
R
T
T
Rated V
T
T
Any terminal to case, t = 1 minute
C
J
C
C
= V
= 25 °C
= 120 °C
= 25 °C
= 100 °C
R
rated
R,
square wave, 20 kHz, T
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
TEST CONDITIONS
®
DiodesEurope@vishay.com
MIN.
1200
-
-
-
-
-
C
= 60 °C
Vishay Semiconductors
TYP.
2.2
2.7
2.1
2.0
2.7
-
- 55 to 150
HFA60EA120P
MAX.
1200
2500
350
130
312
125
30
MAX.
3.0
3.8
75
10
-
-
®
rectifier are in
www.vishay.com
UNITS
UNITS
mA
μA
°C
W
V
A
V
V
1

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VS-HFA60EA120P Summary of contents

Page 1

... TEST CONDITIONS I = 100 μ 150 ° rated 150 ° rated HFA60EA120P Vishay Semiconductors ® rectifier are in MAX. 1200 30 350 = 60 °C 130 C 312 125 2500 - 55 to 150 MIN. TYP. MAX. 1200 - - - 2.2 3.0 - 2.7 3.8 - 2.1 ...

Page 2

... HFA60EA120P Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque www.vishay.com For technical questions within your region, please contact one of the following: 2 DiodesAmericas@vishay ...

Page 3

... HFA60EA120P Vishay Semiconductors 10 150°C 1 125°C 0.1 0.01 25°C 200 400 600 800 1000 1200 Reverse Voltage - V (V) R Fig Typical Values of Reverse Current vs. Reverse Voltage 1E-01 1E+00 Characteristics 300 180° 120° 250 90° 60° 30° 200 DC RMS Limit 150 100 ...

Page 4

... HFA60EA120P Vishay Semiconductors 300 250 If = 50A 125°C 200 If = 50A 25°C 150 100 /dt (A/μs) F Fig Typical Reverse Recovery Time vs. dI Note (1) Formula used ( REV Pd = Forward power loss = F(AV Inverse power loss = ...

Page 5

... Q - area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions HFA60EA120P Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...

Page 6

... HFA60EA120P Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode 120 ® - HEXFRED ...

Page 7

... Revision: 28-Aug-07 SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer nuts 2.00 (0.079) x 45° -A- 3 25.70 (1.012) 6.25 (0.246) 25.20 (0.992) - full 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 0.25 (0.010) M 8.10 (0.319 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) -C- 0.12 (0.005) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 12.30 (0.484) 11.80 (0.464) www.vishay.com 1 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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