VS-HFA08TA60CSPBF Vishay Semiconductors, VS-HFA08TA60CSPBF Datasheet
VS-HFA08TA60CSPBF
Specifications of VS-HFA08TA60CSPBF
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VS-HFA08TA60CSPBF Summary of contents
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... Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA08TA60CSPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available ...
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... ° 200 125 °C J /dt1 °C J /dt2 T = 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK 2 VS-HFA06TB120SPbF Vishay Semiconductors MIN. TYP. MAX. 600 - - - 1.5 1.8 See fig 1.8 2.2 - 1.4 1.7 - 0.17 3.0 See fig 300 See fig ...
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... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1000 100 10 0.1 0.01 0.001 5 6 94596_02 100 ° 100 V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0. Rectangular Pulse Duration (s) 1 thJC 3 VS-HFA06TB120SPbF Vishay Semiconductors T = 150 ° 125 °C J ...
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... 200 125 ° ° 100 dI /dt (A/μs) 94596_05 F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/μs) ...
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... F ( area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 VS-HFA06TB120SPbF Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...
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... Dimensions Part marking information Packaging information ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE VS-HFA08TA60CSPBF VS-HFA08TA60CSTRRP VS-HFA08TA60CSTRLP Revision: 27-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...